Strained Germanium Quantum Well PMOSFETs on SOI with Mobility Enhancement by External Uniaxial Stress

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• 作者：Yan Liu ; Jiebin Niu ; Hongjuan Wang ; Genquan Han ; Chunfu Zhang…
• 关键词：Germanium ; MOSFET ; Mobility ; Quantum well
• 刊名：Nanoscale Research Letters
• 出版年：2017
• 出版时间：December 2017
• 年：2017
• 卷：12
• 期：1
• 全文大小：3768KB
• 刊物主题：Nanotechnology; Nanotechnology and Microengineering; Nanoscale Science and Technology; Nanochemistry; Molecular Medicine;
• 出版者：Springer US
• ISSN：1556-276X
• 卷排序：12

文摘

Well-behaved Ge quantum well (QW) p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) were fabricated on silicon-on-insulator (SOI) substrate. By optimizing the growth conditions, ultrathin fully strained Ge film was directly epitaxially grown on SOI at about 450 °C using ultra-high vacuum chemical vapor deposition. In situ Si₂H₆ passivation of Ge was utilized to form a high-quality SiO₂/Si interfacial layer between the high-κ dielectric and channels. Strained Ge QW pMOSFETs achieve the significantly improved effective hole mobility μ_eff as compared with the relaxed Si and Ge control devices. At an inversion charge density of Q_inv of 2 × 1012 cm−2, Ge QW pMOSFETs on SOI exhibit a 104% μ_eff enhancement over relaxed Ge control transistors. It is also demonstrated that μ_eff of Ge pMOSFETs on SOI can be further boosted by applying an external uniaxial compressive strain.