Space-Charge Manipulation Under Sub-bandgap Illumination in Detector-Grade CdZnTe

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• 作者：Rongrong Guo ; Wanqi Jie ; Yadong Xu ; Gangqiang Zha…
• 关键词：CdZnTe ; deep ; level defects ; space charge ; sub ; bandgap illumination
• 刊名：Journal of Electronic Materials
• 出版年：2015
• 出版时间：October 2015
• 年：2015
• 卷：44
• 期：10
• 页码：3229-3235
• 全文大小：1,259 KB
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• 作者单位：Rongrong Guo (1)
  Wanqi Jie (1)
  Yadong Xu (1)
  Gangqiang Zha (1)
  Tao Wang (1)
  Yun Lin (1)
  Mengmeng Zhang (1)
  Zhuotong Du (1)
  
  1. State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi’an, 710072, Shaanxi, China
  
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Chemistry
  Optical and Electronic Materials
  Characterization and Evaluation Materials
  Electronics, Microelectronics and Instrumentation
  Solid State Physics and Spectroscopy
  
• 出版者：Springer Boston
• ISSN：1543-186X

文摘

The effects of sub-bandgap illumination on the charge transport process and detector performance were experimentally studied in detector-grade CdZnTe. Based on the resulting bulk resistivity and photocurrent response under sub-bandgap illumination, the variation of the deep-level occupation fraction was identified according to a modified Shockley–Read–Hall model. From laser-beam-induced transient current measurements, a decrease of negative space-charge density and consequently flattening of the electric field distribution were found under external sub-bandgap illumination, demonstrating a reduction of the active trap concentration. Furthermore, 241Am gamma-ray spectroscopy response measurements confirmed that simultaneous incidence of sub-bandgap light could significantly improve CdZnTe detector energy resolution and charge collection efficiency. Keywords CdZnTe deep-level defects space charge sub-bandgap illumination