Electrical properties of vertically oriented TiO2 nanowire arrays synthesized by glancing angle deposition technique

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• 作者：Aniruddha Mondal (12136)
  Jay Chandra Dhar (12136)
  P. Chinnamuthu (12136)
  Naorem Khelchand Singh (12136)
  Kalyan Kumar Chattopadhyay (22136)
  Sanat Kumar Das (32136)
  Santosh Ch Das (32136)
  Anirban Bhattacharyya (42136)
  
• 关键词：GLAD ; TiO2 nanowire ; FE ; SEM ; TEM ; RAMAN ; electrical characteristics
• 刊名：Electronic Materials Letters
• 出版年：2013
• 出版时间：March 2013
• 年：2013
• 卷：9
• 期：2
• 页码：213-217
• 全文大小：689 KB
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• 作者单位：Aniruddha Mondal (12136)
  Jay Chandra Dhar (12136)
  P. Chinnamuthu (12136)
  Naorem Khelchand Singh (12136)
  Kalyan Kumar Chattopadhyay (22136)
  Sanat Kumar Das (32136)
  Santosh Ch Das (32136)
  Anirban Bhattacharyya (42136)
  
  12136. Department of Electronics and Communication Engineering, National Institute of Technology Agartala, Jirania, Tripura (West), 799055, India
  22136. Department of Physics, Jadavpur University, Jadavpur, India
  32136. Department of Electronic Science, Calcutta University, Calcutta, India
  42136. Department of Radio Physics and Electronics, Calcutta University, Calcutta, India
  
• ISSN：2093-6788

文摘

Symmetrical TiO2 nanowire (NW) arrays have been synthesized on Si by using glancing angle deposition technique. The Raman spectrum of TiO2 thin film (TF) and TiO2 NWs sample indicates the presence of both anatase and rutile phase TiO2. The electrical properties of the vertically ordered TiO2 NW arrays have been measured. The leakage current for high-k TiO2/Si capacitance reduced with the addition of TiO2 NWs on 30 nm TF. TiO2 NW dielectric was employed to achieve large conduction band offset between oxide layer and Si. A high gate capacitance has been observed due to NW effect. The barrier height between Ag/TiO2-NW interfaces was 0.9 eV and an exclusively lowest leakage current of 8.8 × 10? A/cm2 (at +1 V) was reported for the TiO2 NW device.