Synthesis of Zn-doped colloidal SiO₂ abrasives and their applications in sapphire chemical mechanical polishing slurry

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• 作者：Hong Lei ; LiQin Huang ; Qian Gu
• 刊名：Journal of Materials Science: Materials in Electronics
• 出版年：2017
• 出版时间：January 2017
• 年：2017
• 卷：28
• 期：2
• 页码：1229-1237
• 全文大小：
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Optical and Electronic Materials; Characterization and Evaluation of Materials;
• 出版者：Springer US
• ISSN：1573-482X
• 卷排序：28

文摘

In this paper, Zn-doped colloidal SiO₂ composite abrasives were synthesized by seed-induced growth method and used to polish sapphire substrates. Time of flight secondary ion mass spectroscopy and scanning electron microscopy analyses show that element zinc has been doped into colloidal SiO₂, and the prepared Zn-doped colloidal SiO₂ composite abrasives are all ideal spherical and have good dispersibility. Chemical mechanical polishing (CMP) performances of Zn-doped colloidal SiO₂ composite abrasives on sapphire substrates were investigated using UNIPOL-1502 CMP equipment. Experimental results show that, under the same testing conditions, the surfaces of sapphire polished by Zn-doped colloidal SiO₂ composite abrasives exhibit lower root mean square roughness and higher material removal rate (MRR) than those of pure colloidal SiO₂ abrasive. Especially, the composite abrasive shows the maximum MRR at 1.0 wt% Zn(OH)₂ content. Furthermore, the acting mechanism of Zn-doped colloidal SiO₂ composite abrasives in sapphire CMP was analyzed by X-ray photoelectron spectroscopy, and analytical results show that element zinc in composite abrasives can react with sapphire substrate to form aluminum zincate (Al₂ZnO₄) during CMP, which promotes the chemical effect in CMP and leads to the improvement of MRR.