用户名: 密码: 验证码:
On the role of secondary extinction in the measurement of the integrated intensity of X-ray diffraction peaks and in the determination of the thickness of damaged epitaxial layers
详细信息    查看全文
  • 作者:R. N. Kyutt
  • 刊名:Physics of the Solid State
  • 出版年:2016
  • 出版时间:June 2016
  • 年:2016
  • 卷:58
  • 期:6
  • 页码:1090-1097
  • 全文大小:393 KB
  • 刊物类别:Physics and Astronomy
  • 刊物主题:Physics
    Solid State Physics and Spectroscopy
    Russian Library of Science
  • 出版者:MAIK Nauka/Interperiodica distributed exclusively by Springer Science+Business Media LLC.
  • ISSN:1090-6460
  • 卷排序:58
文摘
The integrated intensity of X-ray diffraction reflections has been measured for a series of epitaxial layers of AIII nitrides (GaN, AlN, AlGaN) grown on different substrates (sapphire, SiC) and characterized by different degrees of structural perfection. It has been shown that, despite a high density of dislocations and a significant broadening of the diffraction peaks, the obtained values are not described by the kinematic theory of X-ray diffraction and suggest the existence of extinction. The results have been analyzed on the basis of the Darwin and Zachariasen extinction models. The secondary extinction coefficients and the thicknesses of epitaxial layers have been determined using two orders of reflection both in the Bragg geometry (0002 and 0004) and in the Laue geometry (\(10\bar 10\)) and \(10\bar 20\)). It has been demonstrated that the secondary extinction coefficient is the greater, the smaller is the broadening of the diffraction peaks and, consequently, the dislocation density. It has been found that, for epitaxial layers with a regular system of threading dislocations, the secondary extinction coefficient for the Laue reflections is substantially greater than that for the Bragg reflections.Original Russian Text © R.N. Kyutt, 2016, published in Fizika Tverdogo Tela, 2016, Vol. 58, No. 6, pp. 1058–1064.

© 2004-2018 中国地质图书馆版权所有 京ICP备05064691号 京公网安备11010802017129号

地址:北京市海淀区学院路29号 邮编:100083

电话:办公室:(+86 10)66554848;文献借阅、咨询服务、科技查新:66554700