ZnO transparent conductive electrodes embedded with Pt nanoclusters for high-efficiency GaN-based light-emitting diodes

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• 作者：Kyurin Kim ; Youngun Gil ; Seonghoon Jeong…
• 关键词：ZnO ; Transparent conductive electrode ; Pt nanoclusters ; Light ; emitting diode
• 刊名：Journal of the Korean Physical Society
• 出版年：2016
• 出版时间：January 2016
• 年：2016
• 卷：68
• 期：2
• 页码：274-278
• 全文大小：1,381 KB
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• 作者单位：Kyurin Kim (1)
  Youngun Gil (1)
  Seonghoon Jeong (1)
  Munsik Oh (1)
  Hyunsoo Kim (1)
  Sung-Nam Lee (2)
  Kwang-Soon Ahn (3)
  
  1. School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Jeonju, 54896, Korea
  2. Department of Nano-Optical Engineering, Korea Polytechnic University, Siheung, 15073, Korea
  3. School of Chemical Engineering, Yeungnam University, Gyeongsan, 38541, Korea
  
• 刊物主题：Physics, general; Theoretical, Mathematical and Computational Physics; Particle and Nuclear Physics;
• 出版者：Springer Netherlands
• ISSN：1976-8524

文摘

ZnO transparent conductive electrodes (TCEs) embedded with Pt nanoclusters were developed for the fabrication of reliable and efficient GaN-based light-emitting diodes (LEDs). The 200-nmthick ZnO films sputtered on Pt nanoclusters showed good TCE performance, i.e., a specific contact resistance of ∼10−5 Ωcm2, a sheet resistance of 50 Ω/sq, and an optical transmittance of 81.5% at 450 nm. LEDs fabricated with the ZnO TCEs embedded with Pt nanoclusters showed lower forward voltages and improved device reliability as compared to the reference LEDs fabricated with pure ZnO TCEs. This is attributed to the role of the interfacial Pt nanoclusters, suppressing the generation of sputtering surface damage on p-GaN and hence enhancing the carrier transport via Ohmic formation. Keywords ZnO Transparent conductive electrode Pt nanoclusters Light-emitting diode