Operation methods of resistive random access memory
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- 作者：GuoMing Wang (1) (2)
ShiBing Long (2)
MeiYun Zhang (2)
Yang Li (2)
XiaoXin Xu (2)
HongTao Liu (1) (2)
Ming Wang (2)
PengXiao Sun (2)
HaiTao Sun (2)
Qi Liu (2)
HangBing Lü (2)
BaoHe Yang (1)
Ming Liu (2) - 关键词：resistive random access memory ; operation method ; voltage sweeping mode ; current sweeping mode ; constant current stress ; constant voltage stress ; rectangular pulse mode ; triangle pulse mode
- 刊名：SCIENCE CHINA Technological Sciences
- 出版年：2014
- 出版时间：December 2014
- 年：2014
- 卷：57
- 期：12
- 页码：2295-2304
- 全文大小：1,182 KB
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ShiBing Long (2)
MeiYun Zhang (2)
Yang Li (2)
XiaoXin Xu (2)
HongTao Liu (1) (2)
Ming Wang (2)
PengXiao Sun (2)
HaiTao Sun (2)
Qi Liu (2)
HangBing Lü (2)
BaoHe Yang (1)
Ming Liu (2)
1. Tianjin Key Laboratory of Film Electronic and Communication Devices, Tianjin University of Technology, Tianjin, 300384, China
2. Lab of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China - ISSN：1869-1900
文摘
In this paper, different electrical measurement and operation methods of resistive random access memory (RRAM) have been summarized, including voltage sweeping mode (VSM), current sweeping mode (CSM), constant current stress (CCS), constant voltage stress (CVS), rectangular pulse mode (RPM), and triangle pulse mode (TPM). Meanwhile, the effects of these measurement methods on the forming, set, reset and read operation as well as endurance performance have been compared. Finally, their respective controllability of various resistive switching parameters have been summarized and analyzed.