The ferroelectric and fatigue behaviors of Dy doped BiFeO3 thin films prepared by chemistry solution deposition

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• 作者：Wei Gao (1)
  Wenyu Xing (1)
  Qi Yun (1)
  Jieyu Chen (1)
  Chenghong Nie (1)
  Shifeng Zhao (1)
  
  1. School of Physical Science and Technology ; Inner Mongolia Key Lab of Nanoscience and Nanotechnology ; Inner Mongolia University ; Hohhot ; People鈥檚 Republic of China
  
• 刊名：Journal of Materials Science: Materials in Electronics
• 出版年：2015
• 出版时间：April 2015
• 年：2015
• 卷：26
• 期：4
• 页码：2127-2133
• 全文大小：1,047 KB
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• 刊物类别：Chemistry and Materials Science
• 刊物主题：Chemistry
  Optical and Electronic Materials
  Characterization and Evaluation Materials
  
• 出版者：Springer New York
• ISSN：1573-482X

文摘

Single-phase multiferroic BiFeO3 and rare-earth metal of dysprosium (Dy) doped BiFeO3 thin films were prepared by chemistry solution deposition. The structure and electrical properties of the BiFeO3 thin films were characterized and investigated. It shows that improved ferroelectric polarization, fatigue endurance and leakage current were obtained. Thus enhanced performance are attributed to the lattice distortion happened along with the structure transformation from the rhombohedral structures toward the coexistence of tetragonal and orthorhombic symmetry structures and the decreased oxygen vacancies after doping Dy. The present work provided an available way on enhancing ferroelectric polarization and fatigue endurance of BiFeO3 based thin films.