MOCVD growth and characterization of vanadium dioxide films

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• 作者：L. V. Yakovkina ; S. V. Mutilin ; V. Ya. Prinz…
• 刊名：Journal of Materials Science
• 出版年：2017
• 出版时间：April 2017
• 年：2017
• 卷：52
• 期：7
• 页码：4061-4069
• 全文大小：
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Materials Science, general; Characterization and Evaluation of Materials; Polymer Sciences; Continuum Mechanics and Mechanics of Materials; Crystallography and Scattering Methods; Classical Mechanics;
• 出版者：Springer US
• ISSN：1573-4803
• 卷排序：52

文摘

High-quality vanadium dioxide (VO₂) films were synthesized on sapphire and silicon substrates by metal–organic chemical vapor deposition. Optimal growth conditions for obtaining abrupt and reversible semiconductor–metal phase transition of VO₂ were found. X-ray diffraction, Raman scattering spectroscopy, and scanning electron microscopy measurements suggested that grown VO₂ films have high crystal quality. It was shown that, at a fixed proportion between the rates of the oxygen and argon flows in the reactor and at a substrate temperature in the range of 440 ≤ T ≤ 470 °C, the monoclinic phase of VO₂ formed in the deposited films. The films grown on sapphire and silicon substrates were found to have an underlying conducting transition layer forming ohmic back contact to VO₂ film. The presence of such back contact layer has allowed us to form VO₂-based vertical devices. In such structures, VO₂ films have shown conductivity changes up to four orders of magnitude due to the phase transition. This demonstrates the high quality of grown films without post-deposition annealing.