Surface texture of single-crystal silicon oxidized under a thin V₂O₅ layer

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• 作者：S. E. Nikitin ; V. N. Verbitskiy ; A. V. Nashchekin ; I. N. Trapeznikova…
• 刊名：Semiconductors
• 出版年：2017
• 出版时间：January 2017
• 年：2017
• 卷：51
• 期：1
• 页码：104-109
• 全文大小：
• 刊物类别：Physics and Astronomy
• 刊物主题：Magnetism, Magnetic Materials; Physics, general;
• 出版者：Pleiades Publishing
• ISSN：1090-6479
• 卷排序：51

文摘

The process of surface texturing of single-crystal silicon oxidized under a V₂O₅ layer is studied. Intense silicon oxidation at the Si–V₂O₅ interface begins at a temperature of 903 K which is 200 K below than upon silicon thermal oxidation in an oxygen atmosphere. A silicon dioxide layer 30–50 nm thick with SiO₂ inclusions in silicon depth up to 400 nm is formed at the V₂O₅–Si interface. The diffusion coefficient of atomic oxygen through the silicon-dioxide layer at 903 K is determined (D ≥ 2 × 10–15 cm2 s–1). A model of low-temperature silicon oxidation, based on atomic oxygen diffusion from V₂O₅ through the SiO₂ layer to silicon, and SiO_x precipitate formation in silicon is proposed. After removing the V₂O₅ and silicon-dioxide layers, texture is formed on the silicon surface, which intensely scatters light in the wavelength range of 300–550 nm and is important in the texturing of the front and rear surfaces of solar cells.