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• 作者：Pramila Mahala ; Sanjay Kumar Behura ; Abhijit Ray…
• 关键词：$$\hbox {In}_\mathrm{x}\hbox {Ga}_{1 ; \mathrm{x}}\hbox {N}$$ In x Ga 1 ; x N ; GaN ; Solar cell ; Grading
• 刊名：Optical and Quantum Electronics
• 出版年：2015
• 出版时间：May 2015
• 年：2015
• 卷：47
• 期：5
• 页码：1117-1126
• 全文大小：1,568 KB
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• 作者单位：Pramila Mahala (1)
  Sanjay Kumar Behura (2)
  Abhijit Ray (1)
  Chenna Dhanavantri (3)
  Omkar Jani (2)
  
  1. School of Solar Energy, Pandit Deendayal Petroleum University, Gandhinagar聽, 382007, Gujarat, India
  2. Solar Energy Research Wing, Gujarat Energy Research and Management Institute-Research, Innovation and Incubation Centre, Gandhinagar聽, 382007, Gujarat, India
  3. CSIR-Central Electronics Engineering Research Institute, Pilani聽, 333031, Rajasthan, India
  
• 刊物主题：Optics, Optoelectronics, Plasmonics and Optical Devices; Electrical Engineering; Characterization and Evaluation of Materials; Computer Communication Networks;
• 出版者：Springer US
• ISSN：1572-817X

文摘

The effect of indium compositional grading on the performance of \(\hbox {p-GaN/i}\hbox {-}\hbox {In}_\mathrm{x}\hbox {Ga}_{1-\mathrm{x}}\hbox {N/GaN}\) solar cell has been investigated using TCAD Silvaco. An enhancement in efficiency of almost two times is found and this may be due to the increase in short circuit current density and open circuit voltage. This can be imputed to high carrier collection due to the reduction of band offset at the interface and high band bending in intrinsic layer. The optimized \(\hbox {GaN}/\hbox {In}_\mathrm{x}\hbox {Ga}_{1-\mathrm{x}}\hbox {N}\) solar cell with indium composition grading from 0 to 0.11, results fill factor of 77聽%, short circuit current density of 0.99聽mA/cm\(^{2}\) and open circuit voltage of 2.21聽V under AM1.5G illumination.