Magnetic field dependent polarizability and electric field dependent diamagnetic susceptibility of a donor in Si

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• 作者：M. Muthukrishnaveni ; N. Srinivasan
• 刊名：Applied Physics A: Materials Science & Processing
• 出版年：2016
• 出版时间：September 2016
• 年：2016
• 卷：122
• 期：9
• 全文大小：501 KB
• 刊物类别：Physics and Astronomy
• 刊物主题：Physics
  Condensed Matter
  Optical and Electronic Materials
  Nanotechnology
  Characterization and Evaluation Materials
  Surfaces and Interfaces and Thin Films
  Operating Procedures and Materials Treatment
  
• 出版者：Springer Berlin / Heidelberg
• ISSN：1432-0630
• 卷排序：122

文摘

The polarizability and diamagnetic susceptibility values of a shallow donor in Si are computed. These values are obtained for the cases \(\bar{E}\parallel \bar{B}\) and \(\bar{E}\, \bot \,\bar{B}\). The anisotropy introduced by these perturbations are properly taken care of in the expressions derived for polarizability and magnetic susceptibility. Our results show that the numerical value of the contribution from electric field to diamagnetic susceptibility is several orders smaller than that of the magnetic field effect. Polarizability values are obtained in a magnetic field by two different methods. The polarizability values decrease as the intensity of magnetic field increases. Using the Clausius–Mossotti relation, the anisotropic values of the refractive indices for different magnetic fields are estimated.