Unipolar resistance switching characteristics in a thick ZnO/Cu/ZnO multilayer structure

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• 作者：Tran Le (1)
  Hoang Cao Son Tran (1)
  Hieu Van Le (2)
  Tuan Tran (2)
  Cao Vinh Tran (3)
  Thanh Tan Vo (4)
  Mau Chien Dang (5)
  Sang Sub Kim (6)
  Jaichan Lee (7)
  Bach Thang Phan (8)
  
• 关键词：Resistance switching ; Random access memory ; Sputtering ; ZnO
• 刊名：Journal of the Korean Physical Society
• 出版年：2012
• 出版时间：April 2012
• 年：2012
• 卷：60
• 期：7
• 页码：1087-1091
• 全文大小：268KB
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• 作者单位：Tran Le (1)
  Hoang Cao Son Tran (1)
  Hieu Van Le (2)
  Tuan Tran (2)
  Cao Vinh Tran (3)
  Thanh Tan Vo (4)
  Mau Chien Dang (5)
  Sang Sub Kim (6)
  Jaichan Lee (7)
  Bach Thang Phan (8)
  
  1. Faculty of Physics and Engineering Physics, University of Science, Vietnam National University, HoChiMinh City, Vietnam
  2. Faculty of Materials Science, University of Science, Vietnam National University, HoChiMinh City, Vietnam
  3. Laboratory of Advanced Materials, University of Science, Vietnam National University, HoChiMinh City, Vietnam
  4. University of Technical Education, HoChiMinh City, Vietnam
  5. Laboratory of Nanotechnology, Vietnam National University, HoChiMinh City, Vietnam
  6. School of Materials Science and Engineering, Inha University, Incheon, 402-751, Korea
  7. School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, 440-746, Korea
  8. Faculty of Materials Science and Laboratory of Advanced Materials, University of Science, Vietnam National University, HoChiMinh City, Vietnam
  
• ISSN：1976-8524

文摘

The resistance switching mechanism and the electrical conduction of thick Cu/ZnO/Cu/ZnO/Cu structures were investigated for various ZnO thicknesses (40, 80, 160, and 320 nm) when the thickness of the middle Cu layer was 2 nm. The ZnO films had a microstructure with columnar grains normal to the substrate. The switching voltages (VSET and VRESET) varied with the thickness of the ZnO layer. A symmetric electrode structure exhibited a unipolar resistance switching. The electrical transport of both high-resistance state (HRS) and low-resistance state (LRS) was Ohmic conduction, and the resistance switching mechanism was driven by the formation and the rupture of Cu conducting paths.