Edge-emitting semiconductor laser driven by a van der Pol oscillator: analytical and numerical analysis

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• 作者：Momo Foutse (1) (4)
  S. T. Kingni (2) (3)
  B. Nana (5)
  P. Woafo (2)
  
  1. Department of Physics ; Faculty of Science ; University of Dschang ; PO Box 67 ; Dschang ; Cameroon
  4. Universit茅 des Montagnes ; Bangangt茅 ; PO Box 208 ; Bangangt茅 ; Cameroon
  2. Laboratory of Modelling and Simulation in Engineering ; Biomimetics and Prototypes ; Department of Physics ; Faculty of Science ; University of Yaound茅 I ; PO Box 812 ; Yaound茅 ; Cameroon
  3. Applied Physics Research Group (APHY) ; Vrije Universiteit Brussel ; Pleinlaan 2 ; 1050聽 ; Brussels ; Belgium
  5. Department of Physics ; Higher Teacher鈥檚 Training College ; University of Bamenda ; PO Box 39 ; Bamenda ; Cameroon
  
• 关键词：Edge ; emitting semiconductor laser ; Van der Pol oscillator ; Sine modulated current ; Lindstedt鈥揚oincar茅 method ; Harmonic balance method ; Period ; doubling to chaos
• 刊名：Optical and Quantum Electronics
• 出版年：2015
• 出版时间：March 2015
• 年：2015
• 卷：47
• 期：3
• 页码：705-720
• 全文大小：830 KB
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• 刊物主题：Optics, Optoelectronics, Plasmonics and Optical Devices; Electrical Engineering; Characterization and Evaluation of Materials; Computer Communication Networks;
• 出版者：Springer US
• ISSN：1572-817X

文摘

A device constituted of an edge-emitting semiconductor laser driven by a van der Pol oscillator is studied analytically and numerically. For small value of the parameter controlling the dissipation in van der Pol oscillator, the Lindstedt鈥揚oincar茅 method is used to find analytically high accurate solutions of the van der Pol equation with a bias term. Then by using the harmonic balance method, we obtain the amplitude of the oscillatory states of the laser output. The analytical results are compared with those from numerical simulation and a good agreement is obtained. By varying the parameter controlling the dissipation in van der Pol oscillator and the normalized reverse bias saturation of the injection current in the laser, we numerically show that the laser output exhibits a period-doubling route to chaos. The coexistence between periodic and chaotic behaviors is found in edge-emitting semiconductor laser driven by a van der Pol oscillator for specific parameters values. It is demonstrated that the edge-emitting semiconductor laser driven by a van der Pol oscillator generates dynamical behaviors found in edge-emitting semiconductor laser subject to a sine modulated current demonstrating the advantage of using a simple and less bulky electronic device to modulate the semiconductor laser pump current.