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• 作者：Winfried Mönch
• 刊名：Journal of Materials Science: Materials in Electronics
• 出版年：2016
• 出版时间：February 2016
• 年：2016
• 卷：27
• 期：2
• 页码：1444-1448
• 全文大小：641 KB
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• 作者单位：Winfried Mönch (1)
  
  1. Faculty of Physics, Universität Duisburg-Essen, 47048, Duisburg, Germany
  
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Chemistry
  Optical and Electronic Materials
  Characterization and Evaluation Materials
  
• 出版者：Springer New York
• ISSN：1573-482X

文摘

The interface-induced gap states (IFIGS) are the fundamental mechanism that determines the band-structure lineup at semiconductor interfaces, i.e., the band-edge offsets at semiconductor heterostructures and the barrier heights of metal–semiconductor or Schottky contacts. Both quantities are composed of a zero-charge transfer and an electrostatic-dipole term which are given by the IFIGS’s branch-point energies and the electronegativities of the two solids in contact, respectively. A respective analysis of experimental valence-band offsets of Ga₂O₃ and Gd₂O₃ heterostructures results in the empirical p-type branch-point energies of 3.57 and 2.85 eV, respectively. From experimental barrier heights of n-Ga₂O₃ Schottky contacts an empirical n-type branch-point energy of 1.34 eV is obtained. The p- and n-type branch point energies of Ga₂O₃ add up to 4.91 eV, the width of the Ga₂O₃ band gap, as to be expected from the theoretical IFIGS-and-electronegativity concept. The experimental valence-band offsets of Ga₂O₃(Gd₂O₃) heterostructures indicate that at their interfaces the chemical composition of the oxide differs from its nominal value in the bulk.