Double aperture double-gate vertical high-electron-mobility transistor

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• 作者：Ball Mukund Mani Tripathi ; Shyama Prasad Das
• 关键词：Single aperture single ; gate vertical HEMTs (SASG ; VHEMT) ; Double aperture double ; gate vertical HEMTs (DADG ; VHEMTs) ; Two dimensional electron gases (2DEG)
• 刊名：Journal of Computational Electronics
• 出版年：2017
• 出版时间：March 2017
• 年：2017
• 卷：16
• 期：1
• 页码：39-46
• 全文大小：
• 刊物类别：Engineering
• 刊物主题：Appl.Mathematics/Computational Methods of Engineering; Electrical Engineering; Theoretical, Mathematical and Computational Physics; Optical and Electronic Materials; Mechanical Engineering;
• 出版者：Springer US
• ISSN：1572-8137
• 卷排序：16

文摘

In this paper, we propose a double aperture double-gate AlGaN/GaN vertical high-electron-mobility transistor (HEMT) to improve the device characteristics, such as the current and the ON resistance (\(\hbox {\textit{R}}_{\mathrm{ON}}\)). The proposed vertical HEMT results are compared to the conventional single aperture single-gate vertical HEMT of equal dimensions, and increased drain current and lower \(\hbox {\textit{R}}_{\mathrm{ON}}\) are shown. A comprehensive simulation study has also been carried out for the proposed device, to analyse the impact of thickness and doping concentration of aperture, drift region, and current blocking layer. In addition, the effect of different materials in current blocking layer on device characteristics is also studied. The obtained results and their effect on device characteristics have been thoroughly analysed and explained accordingly.