Microwave-Assisted Synthesis of High Dielectric Constant CaCu3Ti4O12 from Sol–Gel Precursor

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• 作者：Xin Ouyang ; Peng Cao ; Saifang Huang ; Weijun Zhang…
• 关键词：Microwave synthesis ; CaCu3Ti4O12 ; dielectric properties
• 刊名：Journal of Electronic Materials
• 出版年：2015
• 出版时间：July 2015
• 年：2015
• 卷：44
• 期：7
• 页码：2243-2249
• 全文大小：1,303 KB
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• 作者单位：Xin Ouyang (1) (2)
  Peng Cao (1)
  Saifang Huang (1) (2)
  Weijun Zhang (3)
  Zhaohui Huang (2)
  Wei Gao (1)
  
  1. Department of Chemical and Materials Engineering, The University of Auckland, PB 92019, Auckland, 1142, New Zealand
  2. School of Materials Science and Technology, China University of Geosciences (Beijing), Beijing, 100083, China
  3. Department of Materials Science and Engineering, National University of Defense Technology, Changsha, 410073, China
  
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Chemistry
  Optical and Electronic Materials
  Characterization and Evaluation Materials
  Electronics, Microelectronics and Instrumentation
  Solid State Physics and Spectroscopy
  
• 出版者：Springer Boston
• ISSN：1543-186X

文摘

CaCu<sub>3sub>Ti<sub>4sub>O<sub>12sub> (CCTO) powders derived from sol–gel precursors were calcined and sintered via microwave radiation. The obtained CCTO powders were compared with that obtained via a conventional heating method. For microwave heating, 89.1?wt.% CCTO was achieved from the sol–gel precursor, after only 17?min at 950°C. In contrast, the conventional calcination method required 3?h to generate 87.6?wt.% CCTO content at 1100°C. In addition, the CCTO powders prepared through 17?min of microwave calcination exhibited a small particle size distribution of D<sub>50sub>?=?3.826?μm. It was found that a lengthy hold time of 1?h by microwave sintering is required to obtain a high dielectric constant (3.14?×?103 at 102?Hz) and a reasonably low dielectric loss (0.161) in the sintered CCTO ceramic. Based upon the distinct microstructures, the dielectric responses of the CCTO samples sintered by different methods are attributed to space charge polarization and internal barrier layer capacitor mechanism.