Influence of Indium Addition on Whisker Mitigation in Electroplated Tin Coatings on Copper Substrates

详细信息    查看全文

• 作者：L. Meinshausen ; S. Bhassyvasantha ; B. S. Majumdar…
• 关键词：Tin ; whisker growth ; mitigation ; indium ; self ; diffusion ; electroplating
• 刊名：Journal of Electronic Materials
• 出版年：2016
• 出版时间：January 2016
• 年：2016
• 卷：45
• 期：1
• 页码：791-801
• 全文大小：2,337 KB
• 参考文献：1.G.T. Galyon, SMTAI International Conference, Chicago, IL (2004), p. 26.
  2.K.G. Compton, A. Mendizza, and S.M. Arnold, Corrosion 7, 327 (1951).CrossRef
  3.European Union, Off. J. L 037, 19 (2003).
  4.R.M. Fisher, L.S. Darken, and K.G. Carroll, Acta Metall. 2, 368 (1954).CrossRef
  5.J.R. Black, Proceeding of the IEEE, Vol. 57 (1969), p. 1587.
  6.K.N. Tu, Phys. Rev. B 49, 2030 (1994).CrossRef
  7.A.T. Wu and Y.C. Ding, Microelectron. Reliab. 49, 318 (2009).CrossRef
  8.W.J. Boettinger, C.E. Johnson, and L.A. Bendersky, Acta Mater. 53, 5033 (2005).CrossRef
  9.F. Pei, N. Jadhav, and E. Chason, JOM 64, 1176 (2012).CrossRef
  10.L. Succo, J. Esposito, and M. Cleeves, J. Vac. Sci. Technol. A 7, 814 (1989).CrossRef
  11.K.N. Tu, Acta Metall. 21, 347 (1973).CrossRef
  12.B.-Z. Lee and D.N. Lee, Acta Metall. 46, 3701 (1998).
  13.K.N. Tu and J.C.M. Li, Mater. Sci. Eng. A 409, 131 (2005).CrossRef
  14.C. Xu, Y. Zhang, C. Fan, and J.A. Abys, IEEE Trans. Electron. Packag. Manuf. 28, 31 (2005).CrossRef
  15.N. Jadhav, M. Williams, F. Pei, G. Stafford, and E. Chason, J. Electron. Mater. 42, 312 (2013).CrossRef
  16.E. Sandnes, M.E. Williams, M.D. Vaudin, and G.R. Stafford, J. Electron. Mater. 37, 490 (2008).CrossRef
  17.E. Chason, N. Jadhav, and F. Pei, Prog. Surf. Sci. 88, 103 (2013).CrossRef
  18.I. Dutta, M. Burkard, S. Kuwano, T. Fujita, and M.W. Chen, J. Mater. Sci. 45, 3367 (2010).CrossRef
  19.W.J. Choi, T.Y. Lee, K.N. Tu, N. Tamura, R.S. Celestre, A.A. MacDowell, Y.Y. Bong, and L. Nguyen, Acta Mater. 51, 6253 (2003).CrossRef
  20.M. Sobiech, M. Wohlschlogel, U. Welzel, E.J. Mittemeijer, W. Hugel, A. Seekamp, W. Liu, and G.E. Ice, Appl. Phys. Lett. 94, 22 (2009).CrossRef
  21.M. Sobiech, U. Welzel, E.J. Mittemeijer, W. Hugel, and A. Seekamp, Appl. Phys. Lett. 93, 1 (2008).CrossRef
  22.S.M. Arnold, Proceedings of the IEEE Electrical Components Conference (1959), p. 75.
  23.K.W. Moon, C.E. Johnson, M.E. Williams, O. Kongstein, G.R. Stafford, C.A. Handwerker, and W.J. Boettinger, J. Electron. Mater. 34, L31 (2005).CrossRef
  24.T.A. Woodrow and E.A. Ledbury, Proceedings of SMTA International Conference, Rosemont, IL (2006), p. 1.
  25.E.A. Brandes and G.B. Brook, Smithells Metals Reference Book, 7th ed. (Oxford: Butterworth-Heinemann Ltd, 1992), p. 13.
  26.S.M. Miller, U. Sahayam, and M.G. Norton, Mater. Metall. Trans. A 41A, 3386 (2010).CrossRef
  27.M. Schlesinger and M. Paunovic, Modern Electroplating, 5th ed. (New York: Wiley, 2014), p. 147.
  28.T. Kakeshita, R. Kawanaka, and T. Hasegawa, J. Mater. Sci. 17, 2560 (1982).CrossRef
  29.K.N. Tu, J. Suh, A.T.C. Wu, N. Tamura, and C.H. Tung, Mater. Trans. 46, 2300 (2005).CrossRef
  30.J.A. Brusse, G.J. Ewell, and J.P. Siplon, “Tin Whiskers: Attributes and Mitigation”, 22nd Capacitor and Resistor Technology Symposium (2002), p. 67.
  31.B.E. Deal and A.S. Grove, J. Appl. Phys. 36, 3770 (1965).CrossRef
  32.M.S. Sellars, A.J. Schultz, C. Basaran, and D.A. Kofke, J. Appl. Phys. 110, 1 (2011).
  33.P.C. Millet, R.P. Selvam, and A. Saxena, Mater. Sci. Eng. A 431, 92 (2006).CrossRef
  
• 作者单位：L. Meinshausen (1)
  S. Bhassyvasantha (2)
  B. S. Majumdar (2)
  I. Dutta (1)
  
  1. School of Mechanical & Materials Engineering, Washington State University, Pullman, WA, 99164, USA
  2. Materials and Metallurgical Engineering Department, New Mexico Tech, Socorro, NM, 87801, USA
  
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Chemistry
  Optical and Electronic Materials
  Characterization and Evaluation Materials
  Electronics, Microelectronics and Instrumentation
  Solid State Physics and Spectroscopy
  
• 出版者：Springer Boston
• ISSN：1543-186X

文摘

Among many factors that influence whisker nucleation and growth in electroplated tin, it is now well established that small additions of Pb leads to whisker mitigation. To date, a good non-toxic elemental alternative to Pb that would mitigate whiskers remains elusive. In this work, a 50–100 nm In electroplated layer was incorporated into a 1-μm-thick electroplated Sn on a pure Cu substrate. In order to permit diffusion of In into Sn, heat treatments (HTs) between 125°C and 160°C were performed. The diffusion profile of In was altered by varying the dwell times of the HT and by utilizing two variants of In layer deposition, namely, (1) electroplating In at the top of the Sn plating, and (2) by sandwiching the In plating between two Sn layers, each approximately 500 nm thick. Appropriate control samples of pure Sn were utilized to permit valid data on the influence of In on whisker mitigation. Indium additions reduced whisker growth by at least two orders of magnitude following the 160°C treatment, independent of the location of the In layer. X-ray microanalysis of a focused ion beam cross section of the sandwich plating confirmed that In had indeed diffused into the Sn through the 160°C HT and was a likely reason for the mitigation of Sn whiskers.