Effects of Annealing Ambient on the Characteristics of LaAlO_lus-plus">3 Films Grown by Atomic Layer Deposition

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• 作者：Lu Zhao ; Hong-xia Liu ; Xing Wang ; Chen-xi Fei ; Xing-yao Feng…
• 关键词：LaAlO3 ; ALD ; RTA ; Interfacial property ; Electrical property
• 刊名：Nanoscale Research Letters
• 出版年：2017
• 出版时间：December 2017
• 年：2017
• 卷：12
• 期：1
• 全文大小：1234KB
• 刊物主题：Nanotechnology; Nanotechnology and Microengineering; Nanoscale Science and Technology; Nanochemistry; Molecular Medicine;
• 出版者：Springer US
• ISSN：1556-276X
• 卷排序：12

文摘

We investigated the effects of different annealing ambients on the physical and electrical properties of LaAlO₃ films grown by atomic layer deposition. Post-grown rapid thermal annealing (RTA) was carried out at 600 °C for 1 min in vacuum, N₂, and O₂, respectively. It was found that the chemical bonding states at the interfacial layers (ILs) between LaAlO₃ films and Si substrate were affected by the different annealing ambients. The formation of IL was enhanced during the RTA process, resulting in the decrease of accumulation capacitance, especially in O₂ ambient. Furthermore, based on the capacitance-voltage characteristics of LaAlO₃/Si MIS capacitors, positive V_FB shifting tendency could be observed, indicating the decrease of positive oxide charges. Meanwhile, both trapped charge density and interface trap density showed decreased trends after annealing treatments. In addition, RTA process in various gaseous ambients can reduce the gate leakage current due to the enhancement of valence band offset and the reduction of defects in the LaAlO₃/Si structure in varying degrees.