On the mechanism of carrier scattering at oxide precipitates in Czochralski silicon

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• 作者：Peng Dong (1)
  Xingbo Liang (2)
  Daxi Tian (1) (2)
  Canxing Wang (1)
  Jian Zhao (1)
  Xuegong Yu (1)
  Xiangyang Ma (1)
  Deren Yang (1)
  
  1. State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering ; Zhejiang University ; Hangzhou ; 310027 ; People鈥檚 Republic of China
  2. Ningbo QL Electronics Co. ; Ltd ; Gangdong Road ; Ningbo Free Trade Zone ; Ningbo ; 315800 ; People鈥檚 Republic of China
  
• 刊名：Journal of Materials Science: Materials in Electronics
• 出版年：2015
• 出版时间：April 2015
• 年：2015
• 卷：26
• 期：4
• 页码：2589-2594
• 全文大小：1,036 KB
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• 刊物类别：Chemistry and Materials Science
• 刊物主题：Chemistry
  Optical and Electronic Materials
  Characterization and Evaluation Materials
  
• 出版者：Springer New York
• ISSN：1573-482X

文摘

Oxygen precipitation (OP) in Czochralski (CZ) silicon has been extensively and intensively studied in the past decades due to its significance for improving manufacturing yield of integrated circuits. Nevertheless, how OP affects the carrier transportation in CZ silicon has hardly been addressed. Here, we report that the carrier mobility is decreased to a certain extent while the carrier concentration is nearly unchanged due to significant OP in CZ silicon. Interestingly, such a decrease in mobility can be offset by copper (Cu) decoration of oxygen precipitates via Cu drive-in anneal at appropriate temperatures. It is clarified that the charges associated with the oxygen precipitate/silicon interface states exert additional scattering effect on the carrier transportation, leading to the decrease of carrier mobility as mentioned above. We believe that the present work gains an insight into OP in CZ silicon from the electrical point of view.