A material removal rate model-based chemical action of ultra-thin SUS304 substrate in chemical mechanical polishing
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- 作者：Xin Wei ; Xiangdong Yang ; Xiaozhu Xie ; Wei Hu
- 刊名：The International Journal of Advanced Manufacturing Technology
- 出版年：2016
- 出版时间：July 2016
- 年：2016
- 卷：85
- 期：1-4
- 页码：287-290
- 全文大小：392 KB
- 刊物类别：Engineering
- 刊物主题：Industrial and Production Engineering
Production and Logistics
Mechanical Engineering
Computer-Aided Engineering and Design - 出版者：Springer London
- ISSN：1433-3015
- 卷排序：85
文摘
In this study, a mathematical model of material removal rate (MRR) is developed to investigate the chemical action during chemical mechanical polishing (CMP) of ultra-thin SUS304 substrate (thickness <0.1 mm) based on the theoretical analyses and the experiments. It is found that as the mass concentration of oxidants increases, the material removal rate of SUS304 substrate increases at first, then decreases. Additionally, the relationship between the MRR and the flow rate of the polishing slurry is observed. The MRR is proportional to the flow rate of acidic self-made polishing slurry. Furthermore, a better ultra-thin SUS304 substrate surface quality may be obtained after CMP when the mass concentration of H2O2 is 7.5 %. The present study also investigates the chemical and mechanical synergetic action mechanisms of the CMP process of SUS304 substrate.KeywordsMaterial removal rate modelChemical mechanical polishingUltra-thin SUS304 substrateChemical action