Precursor state of oxygen molecules on the Si(001) surface during the initial room-temperature adsorption
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- 作者：Eunkyung Hwang (1)
Yun Hee Chang (1)
Yong-Sung Kim (1)
Ja-Yong Koo (1)
Hanchul Kim (2) - 关键词：Silicon surface ; Oxygen molecule ; Precursor ; Initial adsorption ; Sticking Coefficient ; Room temperature
- 刊名：Journal of the Korean Physical Society
- 出版年：2012
- 出版时间：October 2012
- 年：2012
- 卷：61
- 期：7
- 页码：1046-1050
- 全文大小：245KB
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Yun Hee Chang (1)
Yong-Sung Kim (1)
Ja-Yong Koo (1)
Hanchul Kim (2)
1. Korea Research Institute of Standards and Science, Daejeon, 305-600, Korea
2. Department of Physics, Sookmyung Women’s University, Seoul, 140-742, Korea - ISSN：1976-8524
文摘
The initial adsorption of oxygen molecules on Si(001) is investigated at room temperature. The scanning tunneling microscopy images reveal a unique bright O2-induced feature. The very initial sticking coefficient of O2 below 0.04 Langmuir is measured to be ?.16. Upon thermal annealing at 250-00 °C, the bright O2-induced feature is destroyed, and the Si(001) surface is covered with dark depressions that seem to be oxidized structures with -Si-O-Si- bonds. This suggests that the observed bright O2-induced feature is an intermediate precursor state that may be either a silanone species or a molecular adsorption structure.