Fabrication and characterization of silicon nanostructures based on metal-assisted chemical etching
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- 作者：Wendong Zhang (1) (2)
Xuge Fan (1) (2)
Shengbo Sang (1) (2)
Pengwei Li (1) (2)
Gang Li (1) (2)
Yongjiao Sun (1) (2)
Jie Hu (1) (2) - 关键词：Metal ; assisted Chemical Etching ; Si Nanostructures ; Si Nanowires ; Wettability ; Raman Spectra
- 刊名：Korean Journal of Chemical Engineering
- 出版年：2014
- 出版时间：January 2014
- 年：2014
- 卷：31
- 期：1
- 页码：62-67
- 全文大小：1,714 KB
- 作者单位：Wendong Zhang (1) (2)
Xuge Fan (1) (2)
Shengbo Sang (1) (2)
Pengwei Li (1) (2)
Gang Li (1) (2)
Yongjiao Sun (1) (2)
Jie Hu (1) (2)
1. MicroNano System Research Center, Information Engineering College, Taiyuan University of Technology, Taiyuan, Shanxi, China
2. Key Lab of Advanced Transducers and Intelligent Control System, Ministry of Education, Taiyuan University of Technology, Taiyuan, Shanxi, China - ISSN：1975-7220
文摘
We present a facile method to fabricate one-dimensional Si nanostructures based on Ag-induced selective etching of silicon wafers. To obtain evenly distributed Si nanowires (SiNWs), the fabrication parameters have been optimized. As a result, a maximum of average growth rate of 0.15 μm/min could be reached. Then, the fabricated samples were characterized by water contact angle (CA) experiments. As expected, the as-etched silicon samples exhibited a contact angle in the range of 132°-36.5°, whereas a higher contact angle (145°) could be obtained by chemical modification of the SiNWs with octadecyltrichlorosilane (OTS). Additionally, Raman spectra experiments have been carried out on as-prepared nanostructures, showing a typical decreasing from 520.9 cm? to 512.4 cm? and an asymmetric broadening, which might be associated with the phonon quantum confinement effect of Si nanostructures.