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Low-Cost Process for Silicon Purification with Bubble Adsorption in Al-Si Melt
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  • 作者:Wenzhou Yu (1) (2)
    Wenhui Ma (1) (2)
    Guoqiang Lv (1)
    Yongsheng Ren (1) (2)
    Yongnian Dai (1) (2)
    Kazuki Morita (3)
  • 刊名:Metallurgical and Materials Transactions B
  • 出版年:2014
  • 出版时间:August 2014
  • 年:2014
  • 卷:45
  • 期:4
  • 页码:1573-1578
  • 全文大小:1,596 KB
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  • 作者单位:Wenzhou Yu (1) (2)
    Wenhui Ma (1) (2)
    Guoqiang Lv (1)
    Yongsheng Ren (1) (2)
    Yongnian Dai (1) (2)
    Kazuki Morita (3)

    1. Faculty of Metallurgical and Energy Engineering, Kunming University of Science and Technology, Kunming, 650093, P.R. China
    2. National Engineering Laboratory for Vacuum Metallurgy, State Key Laboratory of Complex Nonferrous Metal Resources Clean Utilization, Kunming University of Science and Technology, Kunming, 650093, P.R. China
    3. Department of Materials Engineering, Graduate School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan
  • ISSN:1543-1916
文摘
The primary silicon and Al-Si alloy have been separated in hypereutectic Al-Si melt by the electromagnetic stirring and directional solidification processes. During the electromagnetic separation process, the behavior of a hydrogen bubble in Al-Si melt has been discussed. Furthermore, the bubble adsorption effect for the Si purification has been revealed. The results show that the bubble cavity formed in the lower part of the sample by pulling it up. The scanning electron microscope along with energy dispersive spectrometer (SEM-EDS) analysis indicated that a lot of impurities were adsorbed onto the surface of the bubble cavity that may be beneficial for the Si purification. By decreasing the pulling-up rates, the size of the bubble cavity in Al-Si alloy increased, which results in the decreasing of the impurity contents in primary silicon. In this work, the impurity content in primary silicon is 10.8?ppmw, which is obviously improved compared with the 777.57?ppmw in metallurgical silicon. It is a low-cost technology that will be a potential route for the Si purification.

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