Deep ultraviolet photodetectors based on p-Si/i-SiC/n-Ga₂O₃ heterojunction by inserting thin SiC barrier layer

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• 作者：Yuehua An ; Yusong Zhi ; Zhenping Wu ; Wei Cui ; Xiaolong Zhao ; Daoyou Guo…
• 刊名：Applied Physics A: Materials Science & Processing
• 出版年：2016
• 出版时间：December 2016
• 年：2016
• 卷：122
• 期：12
• 全文大小：1,616 KB
• 刊物类别：Physics and Astronomy
• 刊物主题：Physics
  Condensed Matter
  Optical and Electronic Materials
  Nanotechnology
  Characterization and Evaluation Materials
  Surfaces and Interfaces and Thin Films
  Operating Procedures and Materials Treatment
  
• 出版者：Springer Berlin / Heidelberg
• ISSN：1432-0630
• 卷排序：122

文摘

Deep ultraviolet photodetectors based on p-Si/n-Ga₂O₃ and p-Si/i-SiC/n-Ga₂O₃ heterojunctions were fabricated by laser molecular beam epitaxial (L-MBE), respectively. In compare with p-Si/n-Ga₂O₃ heterostructure-based photodetector, the dark current of p-Si/i-SiC/n-Ga₂O₃-based photodetector decreased by three orders of magnitude, and the rectifying behavior was tuned from reverse to forward. In order to improve the quality of the photodetector, we reduced the oxygen vacancies of p-Si/i-SiC/n-Ga₂O₃ heterostructures by changing the oxygen pressure during annealing. As a result, the rectification ratio (I_F/I_R) of the fabricated photodetectors was 36 at 4.5 V and the photosensitivity was 5.4 × 105% under the 254 nm light illumination at −4.5 V. The energy band structure of p-Si/n-Ga₂O₃ and p-Si/i-SiC/n-Ga₂O₃ heterostructures was schematic drawn to explain the physic mechanism of enhancement of the performance of p-Si/i-SiC/n-Ga₂O₃ heterostructure-based deep UV photodetector by introduction of SiC layer.