Demonstration of Logic Operations in High-Performance RRAM Crossbar Array Fabricated by Atomic Layer Deposition Technique

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• 作者：Runze Han ; Peng Huang ; Yudi Zhao ; Zhe Chen ; Lifeng Liu…
• 关键词：RRAM ; Crossbar ; Atomic layer deposition (ALD) ; Logic operation
• 刊名：Nanoscale Research Letters
• 出版年：2017
• 出版时间：December 2017
• 年：2017
• 卷：12
• 期：1
• 全文大小：1402KB
• 刊物主题：Nanotechnology; Nanotechnology and Microengineering; Nanoscale Science and Technology; Nanochemistry; Molecular Medicine;
• 出版者：Springer US
• ISSN：1556-276X
• 卷排序：12

文摘

In this paper, resistive random access memory (RRAM)-based crossbar arrays with the cell structure of Pt/[AlO_y/HfO_x]_m/TiN were fabricated by using atomic layer deposition (ALD) technique. The RRAM devices in the arrays show excellent performances such as good uniformity and high reliability. Based on the fabricated RRAM array, a complete set of basic logic operations including NOR and XNOR were successfully demonstrated.