Effect of depletion layer width on electrical properties of semiconductive thin film gas sensor: a numerical study based on the gradient-distributed oxygen vacancy model

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• 作者：Jianqiao Liu ; Yiting Lu ; Xiao Cui ; Guohua Jin ; Zhaoxia Zhai
• 刊名：Applied Physics A: Materials Science & Processing
• 出版年：2016
• 出版时间：March 2016
• 年：2016
• 卷：122
• 期：3
• 全文大小：1,347 KB
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• 作者单位：Jianqiao Liu (1)
  Yiting Lu (1)
  Xiao Cui (1)
  Guohua Jin (1)
  Zhaoxia Zhai (1)
  
  1. College of Information Science and Technology, Dalian Maritime University, Linghai Road 1, Ganjingzi District, Dalian, 116026, Liaoning, People’s Republic of China
  
• 刊物类别：Physics and Astronomy
• 刊物主题：Physics
  Condensed Matter
  Optical and Electronic Materials
  Nanotechnology
  Characterization and Evaluation Materials
  Surfaces and Interfaces and Thin Films
  Operating Procedures and Materials Treatment
  
• 出版者：Springer Berlin / Heidelberg
• ISSN：1432-0630

文摘

The effects of depletion layer width on the semiconductor gas sensors were investigated based on the gradient-distributed oxygen vacancy model, which provided numerical descriptions for the sensor properties. The potential barrier height, sensor resistance, and response to target gases were simulated to reveal their dependences on the depletion layer width. According to the simulation, it was possible to improve the sensor response by enlarging the width of depletion layer without changing the resistance of the gas sensor under the special circumstance. The different performances between resistance and response could provide a bright expectation that the design and fabrication of gas sensing devices could be economized. The simulation results were validated by the experimental performances of SnO₂ thin film gas sensors, which were prepared by the sol–gel technique. The dependences of sensor properties on depletion layer width were observed to be in agreement with the simulations.