In-situ fabrication and performance optimization of CIGS thin film deposited by ion-beam sputtering without post-selenization

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• 作者：Guang-Xing Liang (1) (2)
  Ping Fan (1) (2)
  Jing-Rong Chi (1)
  Zhuang-Hao Zheng (1)
  Dong-Ping Zhang (1) (2)
  
• 刊名：Journal of Materials Science: Materials in Electronics
• 出版年：2014
• 出版时间：January 2014
• 年：2014
• 卷：25
• 期：1
• 页码：438-443
• 全文大小：445 KB
• 作者单位：Guang-Xing Liang (1) (2)
  Ping Fan (1) (2)
  Jing-Rong Chi (1)
  Zhuang-Hao Zheng (1)
  Dong-Ping Zhang (1) (2)
  
  1. Institute of Thin Film Physics and Application, College of Physics Science and Technology, Shenzhen University, Shenzhen, 518060, China
  2. Shenzhen Key Laboratory of Sensor Technology, Shenzhen University, Shenzhen, 518060, China
  
• ISSN：1573-482X

文摘

Cu(In, Ga)Se2 thin films were fabricated by an in situ fabrication process of ion beam sputtering deposition without post-selenization. X-ray diffraction, scanning electron microscopy, energy-dispersive X-ray spectroscopy and four-point probe technique were used to study the microstructures, surface morphology, composition and electrical properties, respectively. The results show that the films grown above 400?°C are of chalcopyrite structure and Cu (In0.7Ga0.3) Se2 thin film was obtained at annealing temperature of 550?°C. With the increase in annealing temperature, the resistivity of the films decreases while the component is nearly steady. The degree of crystallization of the thin films increased at first with increasing of the annealing time and then decreased with the annealing time increasing further. It was demonstrated that the structural and electrical properties of the films improved significantly with adding selenium amount by sputtering selenium.