Instrumental determination of phosphorus in silicon for photovoltaics by β spectroscopy: a new approach
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- 作者：B. Karches ; K. Welter ; C. Stieghorst…
- 关键词：β ; γ ; Anticoincidence ; Instrumental β spectroscopy ; Solar grade silicon ; Phosphorus ; Photovoltaic ; INAA
- 刊名：Journal of Radioanalytical and Nuclear Chemistry
- 出版年：2017
- 出版时间：January 2017
- 年：2017
- 卷：311
- 期：1
- 页码：541-548
- 全文大小：
- 刊物类别：Chemistry and Materials Science
- 刊物主题：Nuclear Chemistry; Physical Chemistry; Nuclear Physics, Heavy Ions, Hadrons; Diagnostic Radiology; Inorganic Chemistry;
- 出版者：Springer Netherlands
- ISSN：1588-2780
- 卷排序：311
文摘
In this study, we report on the investigation of a β-γ-anticoincidence set up for the determination of phosphorus in silicon for photovoltaics by Instrumental Neutron Activation Analysis. For the suppression of disturbing β/γ radiation emitted by impurities, a plastic scintillator for β-detection is surrounded by a well type NaI(Tl) γ-detector. A suppression of 40 % for the impurities 60Co and 124Sb could be achieved. The limit of detection was determined to be less than 0.1 ppm. In order to correct different β absorption, dedicated Geant4 simulations were used. With first quantitative measurements the phosphorus concentration in silicon could be determined.