Influence of electron distribution on efficiency droop for GaN-based light emitting diodes

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• 作者：Jiajia Fu ; Lixia Zhao ; Ning Zhang ; Junxi Wang ; Jinmin Li
• 关键词：InGaN quantum barriers ; Electron distribution ; Carrier recombination ; Efficiency droop
• 刊名：Journal of Solid State Lighting
• 出版年：2015
• 出版时间：December 2015
• 年：2015
• 卷：2
• 期：1
• 全文大小：2302KB
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• 作者单位：Jiajia Fu (1) (2)
  Lixia Zhao (1) (2)
  Ning Zhang (1) (2)
  Junxi Wang (1) (2)
  Jinmin Li (1) (2)
  
  1. Semiconductor Lighting Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, 100083, Beijing, People鈥檚 Republic of China
  2. State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, 10083, Beijing, People鈥檚 Republic of China
  
• 刊物类别：Microwaves, RF and Optical Engineering; Semiconductors; Optical and Electronic Materials; Optics, Op
• 刊物主题：Microwaves, RF and Optical Engineering; Semiconductors; Optical and Electronic Materials; Optics, Optoelectronics, Plasmonics and Optical Devices; Circuits and Systems; Electronic Circuits and Devices
• 出版者：Springer International Publishing
• ISSN：2196-1107

文摘

By modulating the indium composition in the quantum barriers of InGaN-based LEDs, the influence of electron distribution, electron overflow and Auger recombination on the external quantum efficiency (EQE) and droop effect have been investigated. Experimental results as well as numerical simulations reveal that the electron distribution is the key factor to influence both the peak efficiency and droop effect. The results show that the high electron concentration in the individual quantum well can stimulate the Auger recombination and lead to the droop effect instead of the total effective electron concentration, which is more related to the external quantum efficiency. If we modulate the indium composition in the quantum barriers of the InGaN-based LEDs, a uniform electron distribution can be achieved, which can not only enhance the EQE but also avoid the Auger recombination and improve the droop effect. Keywords InGaN quantum barriers Electron distribution Carrier recombination Efficiency droop