High performance of graphene oxide-doped silicon oxide-based resistance random access memory
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- 作者：Rui Zhang (10)
Kuan-Chang Chang (11)
Ting-Chang Chang (12) (13)
Tsung-Ming Tsai (11)
Kai-Huang Chen (14)
Jen-Chung Lou (10)
Jung-Hui Chen (15)
Tai-Fa Young (16)
Chih-Cheng Shih (11)
Ya-Liang Yang (11) (16)
Yin-Chih Pan (11)
Tian-Jian Chu (11)
Syuan-Yong Huang (11)
Chih-Hung Pan (11)
Yu-Ting Su (12)
Yong-En Syu (12)
Simon M Sze (17) - 关键词：High performance ; Graphene oxide ; RRAM ; Hopping conduction
- 刊名：Nanoscale Research Letters
- 出版年：2013
- 出版时间：December 2013
- 年：2013
- 卷：8
- 期：1
- 全文大小：483 KB
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Kuan-Chang Chang (11)
Ting-Chang Chang (12) (13)
Tsung-Ming Tsai (11)
Kai-Huang Chen (14)
Jen-Chung Lou (10)
Jung-Hui Chen (15)
Tai-Fa Young (16)
Chih-Cheng Shih (11)
Ya-Liang Yang (11) (16)
Yin-Chih Pan (11)
Tian-Jian Chu (11)
Syuan-Yong Huang (11)
Chih-Hung Pan (11)
Yu-Ting Su (12)
Yong-En Syu (12)
Simon M Sze (17)
10. School of Software and Microelectronics, Peking University, Beijing, 100871, People鈥檚 Republic of China
11. Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung, 804, Taiwan
12. Department of Physics, National Sun Yat-Sen University, Kaohsiung, 804, Taiwan
13. Advanced Optoelectronics Technology Center, National Cheng Kung University, Tainan, 700, Taiwan
14. Department of Electronic Engineering and Computer Science, Tung-Fang Design Institute, Kaohsiung, Taiwan
15. Department of Chemistry, National Kaohsiung Normal University, Kaohsiung, Taiwan
16. Department of Mechanical and Electro-Mechanical Engineering, National Sun Yat-Sen University, Kaohsiung, Taiwan
17. Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan - ISSN：1556-276X
文摘
In this letter, a double active layer (Zr:SiO x /C:SiO x ) resistive switching memory device with outstanding performance is presented. Through current fitting, hopping conduction mechanism is found in both high-resistance state (HRS) and low-resistance state (LRS) of double active layer RRAM devices. By analyzing Raman and FTIR spectra, we observed that graphene oxide exists in C:SiO x layer. Compared with single Zr:SiO x layer structure, Zr:SiO x /C:SiO x structure has superior performance, including low operating current, improved uniformity in both set and reset processes, and satisfactory endurance characteristics, all of which are attributed to the double-layer structure and the existence of graphene oxide flakes formed by the sputter process.