Single nanowire-based UV photodetectors for fast switching
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- 作者：Kamran ul Hasan (1)
N H Alvi (1)
Jun Lu (2)
O Nur (1)
Magnus Willander (1) - 刊名：Nanoscale Research Letters
- 出版年：2011
- 出版时间：December 2011
- 年：2011
- 卷：6
- 期：1
- 全文大小：751KB
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N H Alvi (1)
Jun Lu (2)
O Nur (1)
Magnus Willander (1)
1. Department of Science and Technology (ITN), Link?ping University, Campus Norrk?ping, SE-601 74, Norrk?ping, Sweden
2. Thin Film Physics, IFM, Link?ping University, Link?ping, 581 83, Sweden - ISSN：1556-276X
文摘
Relatively long (30 μm) high quality ZnO nanowires (NWs) were grown by the vapor-liquid-solid (VLS) technique. Schottky diodes of single NW were fabricated by putting single ZnO NW across Au and Pt electrodes. A device with ohmic contacts at both the sides was also fabricated for comparison. The current-voltage (I-V) measurements for the Schottky diode show clear rectifying behavior and no reverse breakdown was seen down to -5 V. High current was observed in the forward bias and the device was found to be stable up to 12 V applied bias. The Schottky barrier device shows more sensitivity, lower dark current, and much faster switching under pulsed UV illumination. Desorption and re-adsorption of much smaller number of oxygen ions at the Schottky junction effectively alters the barrier height resulting in a faster response even for very long NWs. The NW was treated with oxygen plasma to improve the switching. The photodetector shows high stability, reversibility, and sensitivity to UV light. The results imply that single ZnO NW Schottky diode is a promising candidate for fabricating UV photodetectors.