铟封接和硅硅键合技术制作微通道型固定流导元件
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摘要
提出了一种制作微通道型固定流导元件的方法,即基于硅硅直接键合将刻蚀深度约为1μm的沟槽结构密封成微通道,利用铟熔融封接技术使其与金属法兰结合构成通道型固定流导组件,使用氦质谱检漏仪对其漏率测试。测量结果表明,固定流导元件的流导测量值与理论计算值接近,相对误差不超过22.2%。氦气作为测量气体时,固定流导元件能够从高真空到30000 Pa压强下实现分子流状态,即流导恒定。
A novel standard-leak with controllable molecular flow conductance was developed,comprising two glycol bonded Si-chips with gas inlet/outlet holes:one has surface micro-fluidic channels(～1 μm deep) fabricated by lithography and the other serves as the top-cover.The conductance can be well-controlled by adjusting the size/number of micro-channels.The constant conductance via the novel Si-based standard-leak,installed between two F35 flanges and sealed with indium gasket,was characterized with helium leak detector,scanning electron microscopy and atomic force microscopy.The measured results show that the new Si-based standard-leak is capable of providing a constant conductance of helium molecular flow in the up-stream pressure range from high vacuum up to 30000 Pa.The measured and calculated results were found to be in fairly good agreement with a relative error of approximately 22.2%.
A novel standard-leak with controllable molecular flow conductance was developed,comprising two glycol bonded Si-chips with gas inlet/outlet holes:one has surface micro-fluidic channels(～1 μm deep) fabricated by lithography and the other serves as the top-cover.The conductance can be well-controlled by adjusting the size/number of micro-channels.The constant conductance via the novel Si-based standard-leak,installed between two F35 flanges and sealed with indium gasket,was characterized with helium leak detector,scanning electron microscopy and atomic force microscopy.The measured results show that the new Si-based standard-leak is capable of providing a constant conductance of helium molecular flow in the up-stream pressure range from high vacuum up to 30000 Pa.The measured and calculated results were found to be in fairly good agreement with a relative error of approximately 22.2%.
引文
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[2] Calcatelli A,Bergoglio M,Mari D.Leak Detection,Calibrations and Reference Flows:Practical Example[J].Vacuum,2007,81:1538-1544
[3] 窦仁超,陈长琦,胡建生,等.四极质谱计在超导托卡马克装置上的应用[J].真空科学与技术学报,2016,36(12):1394-1399
[4] Zhao Y,Cheng Y,Zhang Q,et al.New Leak Element Using Anodic Aluminum Oxide[J].Vacuum,2016,131:111-114
[5] Wei B,Zhao Y,Wang X,et al.Fabrication of Conductance-Controllable Standard Leak Elements on Anodic Aluminum Oxide Using a Selective Coating Method[J].Journal of Vacuum Science & Technology,2017,B35(4):040601
[6] Zhu A,Zhao Y,Wang X,et al.New Leak Assembly Based on Fluidic Nanochannels[J].Journal of Vacuum Science & Technology,2016,A34(5):050604
[7] Outgassing measurements of Torrseal vacuum resin[A].https://dcc.ligo.org/public/0028/T960228/000/T960228-00.pdf.
[8] AIM.Sealing-With-Indium[D].Currrnt Post,2014
[9] Parker,Metal Seal Design Guide[D].High Perforence Engineerde,2015
[10] LIGO Vacuum Compatible Materials List[A].https://dcc.ligo.org/public/0003/E960050/000/E960050-B.pdf.
[11] 杨道虹,徐晨,沈光地.乙二醇辅助多层硅/硅直接键合[J].半导体学报,2005,26(2):396-398