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内质网氧化应激与自噬在脑缺血-再灌注损伤
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  • 作者:李爽
  • 关键词:脑缺血-再灌注损伤 ; 内质网应激 ; 自噬 ; 信号转导
  • 中文刊名:QKKQ
  • 英文刊名:Electronic Journal of General Stomatology
  • 机构:大理大学临床医学院;
  • 出版日期:2019-06-15
  • 出版单位:全科口腔医学电子杂志
  • 年:2019
  • 期:v.6
  • 语种:中文;
  • 页:QKKQ201917112
  • 页数:2
  • CN:17
  • ISSN:11-9337/R
  • 分类号:165-166
摘要
缺血性卒中是一种破坏性脑血管病,已成为世界范围内死亡和发病的主要原因。脑缺血-再灌注损伤被定义为缺血脑组织中引起恶化效应的生化级联反应,损害和拮抗再通的有益作用[1-3]。内质网(ER)是一种多功能细胞器,是细胞主要的钙储存库,内质网也是蛋白质折叠等场所。能量、钙离子失衡、机体氧化还原状态改变等病理情况都可破坏ER的自我平衡能力,引起蛋白错误折叠,进而激活一系列信号途径,共同称为未折叠蛋白反应(unfolded Protein rePose,UPR)。分子伴侣的诱导,错误折叠蛋白的降解,蛋白质翻译抑制是UPR的特征性改变。UPR在细胞内环境稳定过程中起关键作用。然而持续过强的UPR反应会引起内质网应激(ER应激),导致细胞凋亡的发生[4]。自噬是细胞清除胞内错误折叠的蛋白质或受损细胞器,维持内环境稳态的重要方式。ER应激是脑缺血再灌注损伤过程中一个重要步骤。ER应激的早期反应是为了恢复ER内环境稳定,持续长时间ER应激对细胞有害。脑缺血再灌注后ER应激的修饰具有明确的保护作用,使得脑缺血卒中病人有了新的治疗思路。本综述的总体目标是描述内质网氧化应激与自噬导致缺血再灌损伤损伤和未来针对性治疗提供理论基础。
        
引文
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