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大功率忆阻器的实现方法及应用
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  • 英文篇名:Realization approach of high-power memristor and its application
  • 作者:陈艳峰 ; 丘东元 ; 张波 ; 袁昌海 ; 谭斌冠 ; 卢曰海 ; 韦兆华
  • 英文作者:CHEN Yan-feng;QIU Dong-yuan;ZHANG Bo;YUAN Chang-hai;TAN Bin-guan;LU Yue-hai;WEI Zhao-hua;School of Electric Power,South China University of Technology;
  • 关键词:忆阻器 ; 电路模型 ; 功率半导体器件 ; 直流断路器
  • 英文关键词:memristor;;circuit model;;power semiconductor device;;DC circuit breaker
  • 中文刊名:DGDN
  • 英文刊名:Advanced Technology of Electrical Engineering and Energy
  • 机构:华南理工大学电力学院;
  • 出版日期:2019-05-21
  • 出版单位:电工电能新技术
  • 年:2019
  • 期:v.38;No.191
  • 基金:广东省自然科学基金团队项目(2017B030312001)
  • 语种:中文;
  • 页:DGDN201905004
  • 页数:8
  • CN:05
  • ISSN:11-2283/TM
  • 分类号:8-15
摘要
由于纳米尺度的忆阻器件不能直接用于电路研究,目前仍通过搭建等效电路的方法实现忆阻元件的功能。有别于采用模拟器件的忆阻器等效电路模型,本文提出了几种基于电力电子变换器的大功率忆阻器实现方法,这些方法的共同特点是电路模型的功率等级由功率半导体器件参数决定。接着,本文制作了一台磁控型忆阻器原理样机,仿真和实验结果证明该忆阻器电路模型具有功率调节范围大、忆阻特性易于调整等优点。最后,本文探讨了忆阻器在直流断路器等大功率场合的应用,为拓展忆阻器今后的应用提供了参考。
        As the nanoscale memristor cannot be applied to circuit research directly,the existing approaches to realize memristor are still using circuit models. Different from the existing approaches based on analog components,several high-power models of memristor using power electronic converters have been proposed in this paper,which power level is dependent on the parameters of power semiconductor devices. The proposed high-power memristor models have the advantages of wide power range and easy adjustment,which are verified by the simulation and experimental results of a flux-controlled memristor prototype. Finally,the possible utilization of memristor in DC circuit breaker has been discussed,which provides a reference for expanding the future application of memristors.
引文
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