更低温度下和重复再生时NiO/SiO_2催化剂上甲苯完全氧化反应（英文）
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摘要
采用原子层沉积法将NiO沉积到粒径约为100 mm、平均孔径为14 nm的中孔SiO_2颗粒的壳层(壳层厚度11 nm)区域,并分别在450和600°C进行热处理.将制得的这两种Ni/SiO_2样品用于催化甲苯分子吸附及其氧化为CO_2的反应中.结果发现,在450°C热处理的样品在甲苯吸附及其随后氧化为CO_2的反应中表现出更高的活性;当将该样品暴露在160°C甲苯蒸气中,然后加热到450°C时,排放出CO_2,而几乎没有甲苯脱附出来.这表明该催化剂可用于在200°C以下操作的、用于消除建筑物内有味气体的设备中,且该催化剂可以在450°C下经过热处理得到再生.
We deposited NiO via atomic layer deposition on mesoporous SiO_2 particles with diameters of several hundred micrometers and a mean mesopore size of ~14 nm.NiO was deposited within the shell region of mesoporous SiO_2 particles with a shell thickness of ~11 mm.We annealed the as-prepared NiO/SiO_2 at 450 and 600℃,respectively.These two samples were used as catalysts for the uptake of toluene molecules and their oxidative conversion to CO_2.The sample annealed at450℃ was generally more reactive in toluene uptake and its subsequent conversion to CO_2.When the NiO/SiO_2 annealed at 450℃ was exposed to toluene vapor at 160℃ and then heated to 450℃,CO_2 was emitted with almost no toluene desorption.We suggest that our catalysts can be used as building blocks for odor removal devices that operate below 200℃.These catalysts can be regularly regenerated at ~450℃.
We deposited NiO via atomic layer deposition on mesoporous SiO_2 particles with diameters of several hundred micrometers and a mean mesopore size of ~14 nm.NiO was deposited within the shell region of mesoporous SiO_2 particles with a shell thickness of ~11 mm.We annealed the as-prepared NiO/SiO_2 at 450 and 600℃,respectively.These two samples were used as catalysts for the uptake of toluene molecules and their oxidative conversion to CO_2.The sample annealed at450℃ was generally more reactive in toluene uptake and its subsequent conversion to CO_2.When the NiO/SiO_2 annealed at 450℃ was exposed to toluene vapor at 160℃ and then heated to 450℃,CO_2 was emitted with almost no toluene desorption.We suggest that our catalysts can be used as building blocks for odor removal devices that operate below 200℃.These catalysts can be regularly regenerated at ~450℃.
引文
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