金属氧化物薄膜晶体管最新研究进展
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摘要
薄膜晶体管(TFTs)为满足高性能平板显示器的发展需求,正经历着快速增长的态势,同时其应用也扩大到新型透明电子和功能型电子领域.基于大量文献和研究工作,阐述金属氧化物TFTs的发展历程,非晶硅、低温多晶硅以及有机物等半导体材料TFTs的研究现状,重点论述基于单一或多元金属组分以及复合纳米结构的高性能氧化物TFTs的关键性结构和迁移率.认为新型复合纳米结构的氧化物TFTs不仅在很大范围内影响现有的电子器件,而且也将应用于新型的显示、存储以及通信等重要领域.这些新型薄膜材料以及薄膜电子器件未来将会在超越传统薄膜电子领域呈现全新的局面.
Thin film transistors(TFTs)are undergoing rapid growth in order to meet the development needs of high-performance flat panel displays,and also expanding to such fields as new transparent electronics and functional electronic devices.Based on literature review and research,the development of metal oxide TFTs,the research status of amorphous silicon,low temperature polycrystalline silicon and organic semiconductor materials TFTs are discussed.On this basis,the key structure and mobility of high performance oxide TFTs with single or multiple metal components and composite nanostructures are expatiated.Therefore,the new oxide TFTs will not only affect the existing electronic devices in a large range,but also be ap-plied to new important fields such as display,storage and communication.It can also open up brand new opportunities beyond traditional electronics.
Thin film transistors(TFTs)are undergoing rapid growth in order to meet the development needs of high-performance flat panel displays,and also expanding to such fields as new transparent electronics and functional electronic devices.Based on literature review and research,the development of metal oxide TFTs,the research status of amorphous silicon,low temperature polycrystalline silicon and organic semiconductor materials TFTs are discussed.On this basis,the key structure and mobility of high performance oxide TFTs with single or multiple metal components and composite nanostructures are expatiated.Therefore,the new oxide TFTs will not only affect the existing electronic devices in a large range,but also be ap-plied to new important fields such as display,storage and communication.It can also open up brand new opportunities beyond traditional electronics.
引文
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[41] LIU X,WANG C,XIAO X,et al.High mobility amorphous InGaZnO thin film transistor with single wall carbon nanotubes enhanced-current path[J].Applied Physics Letters,2013,103(22):570-10395.
[42] KIM H S,SANG H J,PARK J S,et al.Anion control as a strategy to achieve high-mobility and high-stability oxide thin-film transistors[J].Scientific Reports,2013,3(6125):1459.
[43] WANG S L,YU J W,YEH P C,et al.High mobility thin film transistors with indium oxide/gallium oxide bi-layer structures[J].Applied Physics Letters,2012,100(6):L111.
[44] ZAN H W,YEH C C,MENG H F,et al.Achieving high field-effect mobility in amorphous indium-gallium-zinc oxide by capping a strong reduction layer[J].Advanced Materials,2012,24(26):3509-3514.
[2] CHERENACK K,ZYSSET C,KINKELDEI T.Wearable electronics:Woven electronic fibers with sensing and display functions for smart textiles[J].Advanced Materials,2010,22(45):5178-5182.
[3] CHEN Y,AU J,KAZLAS P,et al.Electronic paper:Flexible active-matrix electronic ink display[J].Nature,2003,423(6936):136.
[4] WANG C,HWANG D,YU Z,et al.User-interactive electronic skin for instantaneous pressure visualization[J].Nature Materials,2013,12(10):899-904.
[5] CANTATORE E,GEUNS T C,GELINCK G H,et al.A 13.56-MHz RFID system based on organic transponders[J].IEEE Journal of Solid-State Circuits,2007,42(1):84-92.
[6] AUSTON D,LAVALLARD P,SOL N,et al.An amorphous silicon photodetector for picosecond pulses[J].Applied Physics Letters,1980,36(1):66-68.
[7] ANTONUK L E,BOUDRY J,HUANG W,et al.Erratum:Demonstration of megavoltage and diagnostic X-ray imaging with hydrogenated amorphous silicon arrays[J].Medical Physics,1992,19(6):1455.
[8] MEYERS S T,ANDERSON J T,HUNG C M.Aqueous inorganic inks for low-temperature fabrication of ZnO TFTs[J].Journal of the American Chemical Society,2008,130(51):17603.
[9] GADRE M J,ALFORD T L.Highest transmittance and high-mobility amorphous indium gallium zinc oxide films on flexible substrate by room-temperature deposition and post-deposition anneals[J].Applied Physics Letters,2011,99(5):733.
[10] FORTUNATO E,BARQUINHA P,BARQUINHA P,et al.Oxide semiconductor thin-film transistors:A review of recent advances[J].Advanced Materials,2012,24(22):2945.
[11] WEIMER P K.The TFT a new thin-film transistor[J].Proceedings of the IRE,1962,50(6):1462-1469.
[12] LIU G,FONASH S J.Polycrystalline silicon thin film transistors on corning 7059glass substrates using short time,low-temperature processing[J].Applied Physics Letters,1993,62(20):2554-2556.
[13] POWELL M J.The physics of amorphous-silicon thin-film transistors[J].IEEE Transactions on Electron Devices,1989,36(12):2753-2763.
[14] CHEN C Y,LEE J W,WANG S D et al.Negative bias temperature instability in low temperature polycrystalline silicon thin-film transistors[J].IEEE Transactions on Electron Devices,2006,53(12):2993-3000.
[15] DIMITRAKOPOULOS C D,MALENFANT P R,DIMITRAKOPOULOS C D,et al.Organic thin film transistors for large area electronics[J].Advanced Materials,2002,14(14):99.
[16] DINELLI F,MURGIA M,LEVY P,et al.Spatially correlated charge transport in organic thin film transistors[J].Physical Review Letters,2004,92(11):116802.
[17] DIMITRAKOPOULOS C D,MASCARO D J.Organic thin-film transistors:A review of recent advances[J].IBM Journal of Research&Development,2001,45(1):11-27.
[18] KWON J Y,JEONG J K.Recent progress in high performance and reliable n-type transition metal oxide-based thin film transistors[J].Semiconductor Science&Technology,2015,30(2):024002.
[19] NOMURA K,OHTA H,UEDA K,et al.Thin-film transistor fabricated in single-crystalline transparent oxide semiconductor[J].Science,2003,300(5623):1269-1272.
[20] NOMURA K,OHTA H,TAKAGI A,et al.Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors[J].Nature,2004,432(7016):488-492.
[21] YANG J H,JI H C,CHO S H,et al.Highly stable AlInZnSnO and InZnO double-layer oxide thin-film transistors with mobility over 50cm2/V·s for high-speed operation[J].IEEE Electron Device Letters,2018,39(4):508-511.
[22] WOO H,KIM T,HUR J,et al.Determination of intrinsic mobility of a bilayer oxide thin-film transistor by pulsed I-V method[J].Nanotechnology,2017,28(17):175201.
[23] JI H C,YANG J H,NAM S,et al.InZnO/AlSnZnInO bilayer oxide thin-film transistors with high mobility and high uniformity[J].IEEE Electron Device Letters,2016,37(10):1295-1298.
[24] CG V D W.Hydrogen as a cause of doping in zinc oxide[J].Physical Review Letters,2000,85(5):1012.
[25] XU L,LI Z,LIU X,et al.Tunable electrical properties in high-valent transition-metal-doped ZnO thin-film transistors[J].IEEE Electron Device Letters,2014,35(7):759-761.
[26] XU L,HUANG C W,ABLIZ A,et al.The different roles of contact materials between oxidation interlayer and doping effect for high performance ZnO thin film transistors[J].Applied Physics Letters,2015,106(5):051607.
[27] ADAMOPOULOS G,THOMAS S,WBKENBERG P H,et al.High-mobility low-voltage ZnO and Li-doped ZnO transistors based on ZrO2high-k dielectric grown by spray pyrolysis in ambient air[J].Advanced Materials,2011,23(16):1894-8.
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[29] BANGER K K,PETERSON R L,MORI K,et al.High performance,low temperature solution-processed barium and strontium doped oxide thin film transistors[J].Chemistry of Materials,2014,26(2):1195-1203.
[30] FORTUNATO E,BARQUINHA P,PIMENTEL A,et al.Amorphous IZO TTFTs with saturation mobilities exceeding 100cm2/Vs[J].Physica Status Solidi(RRL)Rapid Research Letters,2007,1(1):R34-R36.
[31] GODO H,KAWAE D,YOSHITOMI S,et al.Temperature dependence of transistor characteristics and electronic structure for amorphous In-Ga-Zn-Oxide thin film transistor[J].Japanese Journal of Applied Physics,2014,49:03CB04.
[32] NOMURA K,TAKAGI A,KAMIYA T,et al.Amorphous oxide semiconductors for high-performance flexible thinfilm transistors[J].Japanese Journal of Applied Physics,2006,45(5):4303.
[33] MIN K R,YANG S,PARK S H,et al.High performance thin film transistor with cosputtered amorphous Zn-In-Sn-O channel:Combinatorial approach[J].Applied Physics Letters,2009,95(7):072104-072104-3.
[34] LEE D H,HAN S Y,HERMAN G S,et al.Inkjet printed high-mobility indium zinc tin oxide thin film transistors[J].Journal of Materials Chemistry,2009,19(20):3135-3137.
[35] SONG J H,KIM K S,MO Y G,et al.Achieving high field-effect mobility exceeding 50cm2/Vs in In-Zn-Sn-O ThinFilm Transistors[J].IEEE Electron Device Letters,2014,35(8):853-855
[36] WANG C L,CHENG R,LIAO L,et al.High performance thin film transistors based on inorganic nanostructures and composites[J].Nano Today,2013,8(5):514-530.
[37] ZAN H,TSAI W,CHEN C,et al.Effective mobility enhancement by using nanometer dot doping in amorphous IGZO thin-film transistors[J].Advanced Materials,2011,23(37):4237-4242.
[38] WANG C L,LIU X Q,XIAO X H,et al.High-mobility solution-processed amorphous indium zinc,nanocrystal hybrid thin-film transistor[J].IEEE Electron Device Letters,2013,34(1):72-74.
[39] LIU X,WANG C,CAI B,et al.Rational design of amorphous indium zinc oxide/carbon nanotube hybrid film for unique performance transistors[J].Nano Letters,2012,12(7):3596-3601.
[40] LIU X,LIU W,XIAO X,et al.High performance amorphous ZnMgO/carbon nanotube composite thin-film transistors with a tunable threshold voltage[J].Nanoscale,2013,5(7):2830-2834.
[41] LIU X,WANG C,XIAO X,et al.High mobility amorphous InGaZnO thin film transistor with single wall carbon nanotubes enhanced-current path[J].Applied Physics Letters,2013,103(22):570-10395.
[42] KIM H S,SANG H J,PARK J S,et al.Anion control as a strategy to achieve high-mobility and high-stability oxide thin-film transistors[J].Scientific Reports,2013,3(6125):1459.
[43] WANG S L,YU J W,YEH P C,et al.High mobility thin film transistors with indium oxide/gallium oxide bi-layer structures[J].Applied Physics Letters,2012,100(6):L111.
[44] ZAN H W,YEH C C,MENG H F,et al.Achieving high field-effect mobility in amorphous indium-gallium-zinc oxide by capping a strong reduction layer[J].Advanced Materials,2012,24(26):3509-3514.