Dark count rate and band to band tunneling optimization for single photon avalanche diode topologies
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摘要
This paper proposes two optimal designs of single photon avalanche diodes(SPADs) minimizing dark count rate(DCR). The first structure is introduced as p~+/pwell/nwell, in which a specific shallow pwell layer is added between p~+and nwell layers to decrease the electric field below a certain threshold. The simulation results show on average 19.7%and 8.5% reduction of p~+/nwell structure's DCR comparing with similar previous structures in different operational excess bias and temperatures respectively. Moreover, a new structure is introduced as n+/nwell/pwell, in which a specific shallow nwell layer is added between n+and pwell layers to lower the electric field below a certain threshold. The simulation results show on average 29.2% and 5.5% decrement of p~+/nwell structure's DCR comparing with similar previous structures in different operational excess bias and temperatures respectively. It is shown that in higher excess biases(about 6 volts), the n+/nwell/pwell structure is proper to be integrated as digital silicon photomultiplier(dSiPM) due to low DCR. On the other hand, the p~+/pwell/nwell structure is appropriate to be utilized in dSiPM in high temperatures(above 50?C) due to lower DCR value.
This paper proposes two optimal designs of single photon avalanche diodes(SPADs) minimizing dark count rate(DCR). The first structure is introduced as p~+/pwell/nwell, in which a specific shallow pwell layer is added between p~+and nwell layers to decrease the electric field below a certain threshold. The simulation results show on average 19.7%and 8.5% reduction of p~+/nwell structure's DCR comparing with similar previous structures in different operational excess bias and temperatures respectively. Moreover, a new structure is introduced as n+/nwell/pwell, in which a specific shallow nwell layer is added between n+and pwell layers to lower the electric field below a certain threshold. The simulation results show on average 29.2% and 5.5% decrement of p~+/nwell structure's DCR comparing with similar previous structures in different operational excess bias and temperatures respectively. It is shown that in higher excess biases(about 6 volts), the n+/nwell/pwell structure is proper to be integrated as digital silicon photomultiplier(dSiPM) due to low DCR. On the other hand, the p~+/pwell/nwell structure is appropriate to be utilized in dSiPM in high temperatures(above 50?C) due to lower DCR value.
This paper proposes two optimal designs of single photon avalanche diodes(SPADs) minimizing dark count rate(DCR). The first structure is introduced as p~+/pwell/nwell, in which a specific shallow pwell layer is added between p~+and nwell layers to decrease the electric field below a certain threshold. The simulation results show on average 19.7%and 8.5% reduction of p~+/nwell structure's DCR comparing with similar previous structures in different operational excess bias and temperatures respectively. Moreover, a new structure is introduced as n+/nwell/pwell, in which a specific shallow nwell layer is added between n+and pwell layers to lower the electric field below a certain threshold. The simulation results show on average 29.2% and 5.5% decrement of p~+/nwell structure's DCR comparing with similar previous structures in different operational excess bias and temperatures respectively. It is shown that in higher excess biases(about 6 volts), the n+/nwell/pwell structure is proper to be integrated as digital silicon photomultiplier(dSiPM) due to low DCR. On the other hand, the p~+/pwell/nwell structure is appropriate to be utilized in dSiPM in high temperatures(above 50?C) due to lower DCR value.
引文
[1] Lim K T, Kim H, Hwang J, Kim J, Sul W S and Cho G 2019 Nucl.Instnum. Methods Phys. Res., Sect. A 914 25
[2] Schaart D R, Charbon E, Frach T and Schulz V 2016 Nucl. Instrum.Methods Phys. Res., Sect. A 809 31
[3] Frach T, Prescher G, Degenhardt C, de Gruyter R, Schmitz A and Ballizany R 2009 Nuclear Science Symposium Conference Record(NSS/MIC), October 24-November 1, 2009, Orlando, USA, pp. 1959-1965
[4] Finkelstein H, Hsu M J and Esener S C 2006 IEEE Electron Dev. Lett.27 887
[5] Xu Y, Xiang P, Xie X and Huang Y 2016 Semicond. Sci. Technol. 3 1
[6] Haemisch Y, Frach T, Degenhardt C and Thon A 2012 Physics Procedia 37 1546
[7] Haddadifam T and Karami M A 2018 Biomedical Engineer ing/Biomedizinische Technik
[8] Tosi A, Dalla Mora A, Zappa F and Cova S 2009 J. Mod. Opt. 56 299
[9] Mandai S and Charbon E 2013 J. Instrum. 8
[10] ATLAS Device Simulation Software, Silvaco Int., Santa Clara, CA,USA, 2016
[11] Schenk A 1993, 36, pp. 19-34
[12] Hurkx G A M, De Graaff H C, Kloosterman W J and Knuvers M P G1992 IEEE Trans. Electron Dev. 39 2090
[13] Kindt W J and Van Zeijl H W 1998 IEEE Trans. Nucl. Sci. 45 715
[14] Veerappan C 2016"Single-Photon Avalanche Diodes for Cancer Diagnosis", Ph. D. thesis(Delft:Delft University of Technology)
[15] Sze S M and Ng K K 2006 Physics of Semiconductor Devices(Hoboken:John Wiley&Sons), ISBN:978-0-470-06830-4
[16] Pancheri L, Stoppa D and Dalla Betta G F 2014 IEEE J. Sel. Top. Quantum Electron. 20
[17] Piguet C 2005 Low-Power CMOS Circuits:Technology, Logic Design and CAD Tools(Boca Raton:CRC Press)
[18] Roy K, Mukhopadhyay S and Mahmoodi-Meimand H 2003 Proc. IEEE91305
[19] Ghioni M, Gulinatti A, Rech I, Zappa F and Cova S 2007 IEEE J. Sel.Top. Quantum Electron. 13 852
[20] Xu Y, Xiang P and Xie X 2017 Solid State Electron. 129 168
[21] Karami M A, Gersbach M, Yoon H J and Charbon E 2010 Opt Express18 22158
[22] Schroder D K 1997 IEEE Trans. Electron Dev. 44 160
[23] Tokuda Y, Shimizu N and Usami A 1979 Jpn. J. Appl. Phys. 18 309
[2] Schaart D R, Charbon E, Frach T and Schulz V 2016 Nucl. Instrum.Methods Phys. Res., Sect. A 809 31
[3] Frach T, Prescher G, Degenhardt C, de Gruyter R, Schmitz A and Ballizany R 2009 Nuclear Science Symposium Conference Record(NSS/MIC), October 24-November 1, 2009, Orlando, USA, pp. 1959-1965
[4] Finkelstein H, Hsu M J and Esener S C 2006 IEEE Electron Dev. Lett.27 887
[5] Xu Y, Xiang P, Xie X and Huang Y 2016 Semicond. Sci. Technol. 3 1
[6] Haemisch Y, Frach T, Degenhardt C and Thon A 2012 Physics Procedia 37 1546
[7] Haddadifam T and Karami M A 2018 Biomedical Engineer ing/Biomedizinische Technik
[8] Tosi A, Dalla Mora A, Zappa F and Cova S 2009 J. Mod. Opt. 56 299
[9] Mandai S and Charbon E 2013 J. Instrum. 8
[10] ATLAS Device Simulation Software, Silvaco Int., Santa Clara, CA,USA, 2016
[11] Schenk A 1993, 36, pp. 19-34
[12] Hurkx G A M, De Graaff H C, Kloosterman W J and Knuvers M P G1992 IEEE Trans. Electron Dev. 39 2090
[13] Kindt W J and Van Zeijl H W 1998 IEEE Trans. Nucl. Sci. 45 715
[14] Veerappan C 2016"Single-Photon Avalanche Diodes for Cancer Diagnosis", Ph. D. thesis(Delft:Delft University of Technology)
[15] Sze S M and Ng K K 2006 Physics of Semiconductor Devices(Hoboken:John Wiley&Sons), ISBN:978-0-470-06830-4
[16] Pancheri L, Stoppa D and Dalla Betta G F 2014 IEEE J. Sel. Top. Quantum Electron. 20
[17] Piguet C 2005 Low-Power CMOS Circuits:Technology, Logic Design and CAD Tools(Boca Raton:CRC Press)
[18] Roy K, Mukhopadhyay S and Mahmoodi-Meimand H 2003 Proc. IEEE91305
[19] Ghioni M, Gulinatti A, Rech I, Zappa F and Cova S 2007 IEEE J. Sel.Top. Quantum Electron. 13 852
[20] Xu Y, Xiang P and Xie X 2017 Solid State Electron. 129 168
[21] Karami M A, Gersbach M, Yoon H J and Charbon E 2010 Opt Express18 22158
[22] Schroder D K 1997 IEEE Trans. Electron Dev. 44 160
[23] Tokuda Y, Shimizu N and Usami A 1979 Jpn. J. Appl. Phys. 18 309