Ku波段GaNE类功率放大器
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- 英文论文题名：Ku Band Class-E Power Amplifier
- 论文作者：罗俞杰 ; 徐跃杭 ; 卢啸 ; 延波 ; 陈堂胜 ; 徐锐敏
- 英文论文作者：LUO Yu-jie ; XU Yue-hang ; LU Xiao ; YAN Bo ; CHEN Tang-sheng ; XU Rui-min ; School of Electronic Engineering ; University of Electronic Science and Technology of China ; Nanjing Electronic Devices Institute
- 年：2014
- 作者机构：电子科技大学电子工程学院;南京电子器件研究所;
- 论文关键词：功率放大器 ; GaN ; E类 ; Ku波段 ; 开关型
- 英文论文关键词：poweramplifier ; GaN ; Class-E ; Kuband ; switch mode
- 会议召开时间：2014-07-21
- 会议录名称：2014年全国电磁兼容与防护技术学术会议论文集（上）
- 语种：中文
- 分类号：TN722.75
- 学会代码：WBXB
- 会议名称：2014年全国电磁兼容与防护技术学术会议
- 会议地点：中国湖南常德
- 主办单位：中国电子学会微波分会、中国工程物理研究院复杂电磁环境科学与技术重点实验室、总装备部电磁兼容及防护技术专业组、天线与微波技术重点实验室
- 学会名称：《微波学报》编辑部
- 页数：3
- 文件大小：552k
- 原文格式：D
- 会议级别：全国
摘要
Ga NHEMT由于同时具有高功率密度和高速度的特点,是国内外学者研究的热点。同时,E类功率放大器具有良好的高效率宽频带的特性,应用前景广泛。本文基于南京电子器件研究所Ga N HEMT器件,开展了Ku波段Ga N E类功率放大器设计研究。针对Ga N HEMT器件较高的输出电容Cds,采用补偿微带的结构减小寄生参数的影响,设计了13.7GHz~14.2GHz的Ga N E类功率放大器。实测表明,该放大器在连续波输入功率25d Bm的情况下,在13.7GHz~14.2GHz频率范围内漏极效率大于36%,输出功率大于30d Bm。
High electron mobility transistors(HEMTs) made by Ga N, due to its high power density and high speed features,become hot topics both at home and abroad.At the same time, the class E power amplifier, having a characteristics of high-efficiency and wide band,shows a broad prospect of application.In this article,we choose a Ga N HEMT devices made by Nanjing Electronic Devises Institudeto do some research of Ga N class-E power amplifier.On account of the high output capacitance of Ga N HEMT, we use the compensation microstrip structure to reduce the influence of parasitic parameters,and then designed a Ga N class E power amplifier working at 13.7 GHz ~ 14.2 GHz. The measured data shows that drain efficiency is more than 36%, the output power greater than 30 d Bm when the continuous wave power is 25 d Bm.
High electron mobility transistors(HEMTs) made by Ga N, due to its high power density and high speed features,become hot topics both at home and abroad.At the same time, the class E power amplifier, having a characteristics of high-efficiency and wide band,shows a broad prospect of application.In this article,we choose a Ga N HEMT devices made by Nanjing Electronic Devises Institudeto do some research of Ga N class-E power amplifier.On account of the high output capacitance of Ga N HEMT, we use the compensation microstrip structure to reduce the influence of parasitic parameters,and then designed a Ga N class E power amplifier working at 13.7 GHz ~ 14.2 GHz. The measured data shows that drain efficiency is more than 36%, the output power greater than 30 d Bm when the continuous wave power is 25 d Bm.
引文
[1]S.C.Cripps,Advanced Techniques in RF Power Amplifier Design.Norwood,MA:Artech House,2002.
[2]Yoichiro Takayama,“Ku-and K-band Internally Matched High-Power Ga As FET Amplifiers”,Electronics Letters,vol.15 no.18,pp.562-564,1979.
[3]Sokal NO,Sokal AD.Class E-A new class of high-efficiency tuned single–ended switching power amplifiers[J].IEEE Solid-State Circuits,1975,10(3):168-176
[4]A High-Efficiency Class-E Ga N HEMT Power Amplifier for WCDMA Applications,microwave and wireless components letters,pages:622-624,2007
[5]K.Yamanaka,N.Yunoues.Chaki M.Nakayama.L-band 360W and 65%PAE Ga N Amplifier with mixed Class-E/F Harmonic Control
[6]安士全,曹锐;一种宽禁带器件的高效E类功率放大器设计.中国电子科学研究院学报;2012
[7]孙春妹,钟世昌,陈堂胜,任春江,焦刚,陈辰,高涛;K u波段2 0 W A 1 G a N/G a N功率管内匹配技术研究.电子与封装,2010
[8]W.J.Luo,X.J.Chen,L.Pang,T.T.Yuan,X.Y.Liu;A 24W Ku band Ga N based power amplifier with 9.1 d B linear gain.Microelectronics Journal 43(2012)569-572
[9]Doeer.I;Fraunhofer-IZM,Parameterized models for a RF chip-to-substrate interconnect.IEEE,2001
[10]Kizilbey,O.Palamutcuogullari,O.;Yarman,S.B.A new approach for the design of class-E Ga N power amplifierwith high efficiency[C].Mediterranean Microwave Symposium(MMS),2013
[2]Yoichiro Takayama,“Ku-and K-band Internally Matched High-Power Ga As FET Amplifiers”,Electronics Letters,vol.15 no.18,pp.562-564,1979.
[3]Sokal NO,Sokal AD.Class E-A new class of high-efficiency tuned single–ended switching power amplifiers[J].IEEE Solid-State Circuits,1975,10(3):168-176
[4]A High-Efficiency Class-E Ga N HEMT Power Amplifier for WCDMA Applications,microwave and wireless components letters,pages:622-624,2007
[5]K.Yamanaka,N.Yunoues.Chaki M.Nakayama.L-band 360W and 65%PAE Ga N Amplifier with mixed Class-E/F Harmonic Control
[6]安士全,曹锐;一种宽禁带器件的高效E类功率放大器设计.中国电子科学研究院学报;2012
[7]孙春妹,钟世昌,陈堂胜,任春江,焦刚,陈辰,高涛;K u波段2 0 W A 1 G a N/G a N功率管内匹配技术研究.电子与封装,2010
[8]W.J.Luo,X.J.Chen,L.Pang,T.T.Yuan,X.Y.Liu;A 24W Ku band Ga N based power amplifier with 9.1 d B linear gain.Microelectronics Journal 43(2012)569-572
[9]Doeer.I;Fraunhofer-IZM,Parameterized models for a RF chip-to-substrate interconnect.IEEE,2001
[10]Kizilbey,O.Palamutcuogullari,O.;Yarman,S.B.A new approach for the design of class-E Ga N power amplifierwith high efficiency[C].Mediterranean Microwave Symposium(MMS),2013