2-4GHz宽带高效率功放的设计
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- 英文论文题名：Design of a broadband high-efficiency power amplifier working in 2-4GHz
- 论文作者：孙洪铮 ; 丁浩 ; 王志刚
- 英文论文作者：Sun Hongzheng ; Ding Hao ; Wang Zhigang ; School of Electronic Engineering ; University of Electronic Science and Technology of China
- 年：2017
- 作者机构：电子科技大学电子工程学院;
- 论文关键词：功率放大器 ; 宽带匹配网络 ; GaN ; 高效率
- 英文论文关键词：power amplifier ; broadband matching network ; GaN ; high-efficiency
- 会议召开时间：2017-05-08
- 会议录名称：2017年全国微波毫米波会议论文集（中册）
- 英文会议录名称：Proceedings of 2017 National Conference on Microwave and Millimeter Waves(NCMMW2017)
- 语种：中文
- 分类号：TN722.75
- 学会代码：ZDWB
- 会议名称：2017年全国微波毫米波会议
- 会议地点：中国浙江杭州
- 主办单位：中国电子学会
- 学会名称：中国电子学会微波分会
- 页数：4
- 文件大小：1028k
- 原文格式：D
- 会议级别：全国
摘要
本文针对宽带高效率功放的设计要求,基于宽带匹配网络设计了一款Ga N宽带高效率功率放大器,其工作频率覆盖整个S波段。仿真结果显示,该功放在整个S频段内漏效率DE大于62%,PAE大于57%,增益大于10.6d B。实测结果表明,该功放在整个频段内漏效率DE大于54%,PAE大于48%,增益大于9d B,增益平坦度在1d B以内,实现了S波段高效率宽带功率放大器的设计。
The article designs a Ga N broadband high efficiency power amplifier based on the broadband matching network for the requirements of the broadband high efficiency power amplifier, covering the entire S-band. Simulation results displayed that the drain efficiency(DE) is better than 62%, the PAE is better than 57% and the gain is more than 10.6 d B. And the test results displayed that the drain efficiency(DE) is better than 54%, the PAE is better than 48% and the gain is more than 9 d B, the flatness of the gain is less than 1 d B, achieving the design of the broadband high-efficiency power amplifier.
The article designs a Ga N broadband high efficiency power amplifier based on the broadband matching network for the requirements of the broadband high efficiency power amplifier, covering the entire S-band. Simulation results displayed that the drain efficiency(DE) is better than 62%, the PAE is better than 57% and the gain is more than 10.6 d B. And the test results displayed that the drain efficiency(DE) is better than 54%, the PAE is better than 48% and the gain is more than 9 d B, the flatness of the gain is less than 1 d B, achieving the design of the broadband high-efficiency power amplifier.
引文
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5 曹韬,曾荣.基于Ga N HEMT器件的宽带高效功率放大器[J].微波学报,2012,28(6):76-79.
6 董磊,何松柏,雷奇.基于带通匹配网络理论的宽带高效率功放设计[J].太赫兹科学与电子信息学报,2011,09(4):449-452.
7 Hanks B,Skelton R.Closed-form solutions for linear regulator-design of mechanical systems including optimal weighting matrix selection[J].2013.
8 陈会,张玉兴.基于多谐波双向牵引技术的微波功率放大器设计[J].微波学报,2008,24(3):57-60.
2 Colantonio P,Giannini F,Limiti E.High Efficiency RF and Microwave Solid State Power Amplifiers[M].2009.
3 F.Sechi,M.Bujatti.Solid-State Microwave High-Power Amplifiers[M].Norwood,Artech House Inc.,2009
4 Saad P,Fager C,Cao H,et al.Design of a Highly Efficient 2–4-GHz Octave Bandwidth Ga N-HEMT Power Amplifier[J].Microwave Theory&Techniques IEEE Transactions on,2010,58(7):1677-1685.
5 曹韬,曾荣.基于Ga N HEMT器件的宽带高效功率放大器[J].微波学报,2012,28(6):76-79.
6 董磊,何松柏,雷奇.基于带通匹配网络理论的宽带高效率功放设计[J].太赫兹科学与电子信息学报,2011,09(4):449-452.
7 Hanks B,Skelton R.Closed-form solutions for linear regulator-design of mechanical systems including optimal weighting matrix selection[J].2013.
8 陈会,张玉兴.基于多谐波双向牵引技术的微波功率放大器设计[J].微波学报,2008,24(3):57-60.