空气稳定的低回滞碳纳米管薄膜晶体管
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- 英文论文题名：Air-stable low hysteresis carbon nanotube thin-film transistors
- 论文作者：杨毅 ; 李立强 ; 李清文
- 英文论文作者：Yi Yang ; Liqiang Li ; Qingwen Li ; Suzhou Institute of Nano-Tech and Nano-Bionics ; Chinese Academy of Science
- 年：2016
- 作者机构：中国科学院苏州纳米技术与纳米仿生研究所;
- 论文关键词：碳纳米管晶体管 ; 聚甲基丙烯酸甲酯 ; 回滞 ; 封装
- 英文论文关键词：carbon nanotube transistors ; PMMA ; hysteresis ; encapsulate
- 会议召开时间：2016-07-01
- 会议录名称：中国化学会第30届学术年会摘要集-第四十一分会：纳米材料与器件
- 语种：中文
- 分类号：TN321.5;O613.71
- 学会代码：ZGHY
- 会议名称：中国化学会第30届学术年会-第四十一分会 ; 纳米材料与器件
- 会议地点：中国辽宁大连
- 主办单位：中国化学会
- 学会名称：中国化学会
- 页数：1
- 文件大小：158k
- 原文格式：D
- 会议级别：全国
摘要
碳纳米管独特的电子弹道输运特性使其在室温下的理论迁移率高达105cm2/(Vs)~[1],可用来制备高性能碳纳米管薄膜晶体管~[2],引起了研究者近年来的大量的研究。然而,由空气中水氧分子带来的回滞效应仍是影响器件性能的一个重要因素。本文制备了用聚甲基丙烯酸甲酯(PMMA)封装的低回滞碳纳米管薄膜晶体管。通过标准光刻并热蒸镀0.5nm Cr和20nm Pd作源漏电极。半导体型单壁碳纳米管通过聚咔唑基共轭聚合物分离并沉积在硅片上形成半导体网络薄膜。PMMA薄膜具有良好的绝缘性以及极低的吸湿度,能够有效的使碳纳米管与空气中的水分子和氧分子隔绝。在封装后器件的回滞均值约为1.85V(相对于工作电压的比例为3%,而其他报道的比例约为9.5%~[3])。我们将所有的器件在大气环境下保存并且经过30天以后回滞并没有明显变化,证明了这种封装方法在空气中的稳定性。
Carbon nanotubes possess a theory mobility of 10~5cm~2/(Vs)~[1], which contributes to high performance carbon nanotube transistors~[2]. However, the hysteresis is still a serious problem that effect the property of devices. In this work, we fabricate carbon nanotube transistors with low hysteresis encapsulated by poly(methyl methacrylate)(PMMA). Source and drain electrodes are prepared by standard photolithography and thermal evaporation. Semi-conducting single-walled carbon nanotubes(s-SWCNT) are deposited on wafer. PMMA film possesses great insulativity as well as very low hygroscopicity, which effectively isolate the carbon nanotubes from water molecules and oxygen molecules in ambient atmosphere. An average hysteresis of these devices after encapsulated is about 1.85V(the hysteresis is just 3%of work voltage, compared with other reports of a 9.5% proportion~[3]). We keep these devices in ambient air and there is no obvious change in their hysteresis even after 30 days, which proves the air-stability of this method.
Carbon nanotubes possess a theory mobility of 10~5cm~2/(Vs)~[1], which contributes to high performance carbon nanotube transistors~[2]. However, the hysteresis is still a serious problem that effect the property of devices. In this work, we fabricate carbon nanotube transistors with low hysteresis encapsulated by poly(methyl methacrylate)(PMMA). Source and drain electrodes are prepared by standard photolithography and thermal evaporation. Semi-conducting single-walled carbon nanotubes(s-SWCNT) are deposited on wafer. PMMA film possesses great insulativity as well as very low hygroscopicity, which effectively isolate the carbon nanotubes from water molecules and oxygen molecules in ambient atmosphere. An average hysteresis of these devices after encapsulated is about 1.85V(the hysteresis is just 3%of work voltage, compared with other reports of a 9.5% proportion~[3]). We keep these devices in ambient air and there is no obvious change in their hysteresis even after 30 days, which proves the air-stability of this method.
引文
[1]Woo Jong Yu;Young Hee Lee.Chem Sus Chem.2011,4;890
[2]Ahmad E.Islam;John A.Rogers;Muhammad A.Alam.Adv.Mater.2015
[3]Lorraine RISPAL;Tobias TSCHISCHKE;Hongyu YANG;Udo SCHWALKE.Jpn.J.Appl.Phys.2008,47(4):3287
[2]Ahmad E.Islam;John A.Rogers;Muhammad A.Alam.Adv.Mater.2015
[3]Lorraine RISPAL;Tobias TSCHISCHKE;Hongyu YANG;Udo SCHWALKE.Jpn.J.Appl.Phys.2008,47(4):3287