Ka频段单片集成功率放大器电路设计
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摘要
本论文课题来源于国防科技重点实验室基金项目。课题要求研制Ka频段单片功率放大器,指标要求为: f 0±1GHz,小信号增益15dB,输出功率32dBm。
根据MMIC发展趋势以及国内实际情况,论文采用多级、多路合成的方法设计Ka频段MMIC功率放大器,并针对Ka频段单片功率放大器展开了研究,包括有源器件模型的验证、无源元件分析、电路拓扑的选取、匹配电路和偏置电路的形式,然后在版图调整规则下,对电路进行了电磁仿真,确定了最终电路版图,最后利用国内现有GaAs 0.25μm工艺对Ka频段MMIC功率放大器进行了流片。
本课题设计了两种电路结构,进行了三次流片。利用自行设计的测试夹具对功放单片进行了测试,测试结果为:在频率f_0±1GHz范围内,输出功率均大于30dBm,在频率f_0处获得了最高输出功率31.2dBm,输入驻波比小于2.5:1,小信号增益大于15dB。虽然测试结果显示与预期目标还有一定的差距,但该结果还是令人满意的。
The project is from National Science Key Lab Fund project. The objective of the project is to develop a Ka-Band MMIC Power Amplifier. The request is that: f_0±1GHz, small signal gain 15dB, output power 32dBm.
According the development of the MMIC, the project adopts the method of multi-stage and multi-way to design the power amplifier. The research of the Ka-Band MMIC power amplifier is presented in the paper, including the verified of the model、the analysis of the passive component、the selective of the topology、matching network、the type of the bias circuit, and then the circuit layout is decided by the rule of the layout adjustment and the electromagnetism simulation. Finally, the designed MMIC Power Amplifier circuits are implemented with the 0.25μm GaAs Foundry of domestic. Two different circuit structures are used in this paper, which are carried out three times for technics implements. We test the Ka-Band MMIC power amplifier with the fixture designed by ourself. The results are: the output power>30dBm, the maximal output power is 31.2dBm at f_0, the input voltage standing wave ratio(VSWR) <2.5:1, the small signal gain >15dB in the frequency range of f_0±1GHz. Although the testing results have some distance with the prospective aim, we also get the satisfied results.
根据MMIC发展趋势以及国内实际情况,论文采用多级、多路合成的方法设计Ka频段MMIC功率放大器,并针对Ka频段单片功率放大器展开了研究,包括有源器件模型的验证、无源元件分析、电路拓扑的选取、匹配电路和偏置电路的形式,然后在版图调整规则下,对电路进行了电磁仿真,确定了最终电路版图,最后利用国内现有GaAs 0.25μm工艺对Ka频段MMIC功率放大器进行了流片。
本课题设计了两种电路结构,进行了三次流片。利用自行设计的测试夹具对功放单片进行了测试,测试结果为:在频率f_0±1GHz范围内,输出功率均大于30dBm,在频率f_0处获得了最高输出功率31.2dBm,输入驻波比小于2.5:1,小信号增益大于15dB。虽然测试结果显示与预期目标还有一定的差距,但该结果还是令人满意的。
The project is from National Science Key Lab Fund project. The objective of the project is to develop a Ka-Band MMIC Power Amplifier. The request is that: f_0±1GHz, small signal gain 15dB, output power 32dBm.
According the development of the MMIC, the project adopts the method of multi-stage and multi-way to design the power amplifier. The research of the Ka-Band MMIC power amplifier is presented in the paper, including the verified of the model、the analysis of the passive component、the selective of the topology、matching network、the type of the bias circuit, and then the circuit layout is decided by the rule of the layout adjustment and the electromagnetism simulation. Finally, the designed MMIC Power Amplifier circuits are implemented with the 0.25μm GaAs Foundry of domestic. Two different circuit structures are used in this paper, which are carried out three times for technics implements. We test the Ka-Band MMIC power amplifier with the fixture designed by ourself. The results are: the output power>30dBm, the maximal output power is 31.2dBm at f_0, the input voltage standing wave ratio(VSWR) <2.5:1, the small signal gain >15dB in the frequency range of f_0±1GHz. Although the testing results have some distance with the prospective aim, we also get the satisfied results.
引文
[1] 《中国集成电路大全》编委会. 微波集成电路.北京:国防工业出版社,1995
[2] 鲁高莲. MMIC 技术在卫星有效载荷上的应用. 半导体技术,1999,24(1):10-12
[3] Robertson I D, Lucyszyn S. RFIC and MMIC design and technology. London: The Institution of Electrical Engineers(IEE).2001,523-578
[4] 东熠. 蓬勃发展的 GaAs MMIC 讨论会侧记. 半导体情报,1995,32(1):34-35
[5] 费元春,陈世伟. 微波单片集成电路发展趋势. 北京理工大学学报,1996,16(3):297-302
[6] 程文芳,盛柏桢. 微波、毫米波砷化镓单片集成电路及其应用(3). 电子元器件应用,2002,4(10):397-398
[7] 陈效建. 迅速发展的微波与毫米单片集成电路 MMIC 技术. 全国微波毫米波会议论文集,2001,783-785
[8] 李效白. 砷化镓微波功率场效应晶体管及其集成电路.北京:科学出版社,1998
[9] Chul Soon Park. MMIC(RFIC)Design. Information and Communications University,2002
[10] D. Lingram, D. I. Stones, Jeffrey, H.Elliott, et. al. A 6W Ka-Band power module using MMIC power amplifier. IEEE MTT-45, 1997,21(3):2424-2430
[11] James M. Schellenberg. 1 and 2-Watt MMIC Power Amplifiers for Commercial K/Ka-Band Applications. IEEE MTT-S Digest, 2002,11(5):445-448
[12] Keith M, Simon, Ratana M. Wohlert, John P. Wendler, et. al. K Through Ka-Band Driver And Power Amplifiers. IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1996,5(3):29-32
[13] Shuoqi Chen, Sabyasachi Nayak, et. al. A Ka/Q-Band 2 Watt MMIC Power Amplifier Using Dual Recess 0.15μm PHEMT Process. IEEE MTT-S Digest, 2004,12(8):1669-1672
[14] A. Bessemoulin, J. Dishong, G. Clark, D. White, et. al. 1-Watt Broad Ka-band Ultra Small High Power Amplifier MMICs Using 0.25μm GaAs PHEMT. IEEE GaAs Digest, 2002,10(6):40-43
[15] Francois Y. Colomb, Aryeh Platzker. 2 and 4 Watt Ka-band GaAs PHEMT Power Amplifier MMICs. IEEE MTT-S Digest, 2003,7(5):843-846
[16] J. J. Komiak, et. al. Fully Monolithic 4 watt High Efficiency Ka-Band Power Amplifier. IEEE MTT-S Microwave Symp Digest, 1990,18(5):947-950
[17] M.K.Siddiqui et. al. A High Power Broadband Monolithic Power Amplifier for Ka-Band Ground Terminals. IEEE MTT-S Int. Microwave Symp Digest, 1999,23(10):947-950
[18] Fairchild et. al. Raython data sheet:RMPA39200,RMPA39300. 2001,235-238
[19] Y. Hwang, P. D. Chow, J. Lester, et. al. One Watt Q-Band Class A Pseudomorphic HEMT MMIC Amplifier. IEEE MTT-S Digest, 2000,10(5):805-809
[20] D.M.Silds,G. Rinke, et. al. Triquint data sheet:TGA1073-SCC, TGA1171-SCC, TGA1141-EPU. 2002,135-139
[21] Shuoqi Chen, Elias Reese, Keon-Shik Kong. A Balanced 2 Watt Compact PHEMT Power Amplifier MMIC for Ka-band Applications. IEEE MTT-S Microwave Symp Digest, 2003,15(9):847-850
[22] 丁奎章,于玲莉,何庆国. 8～12GHz 低噪声 PHEMT 单片集成电路. 半导体情报,1998,35(4):18-20
[23] 陈效建,乔宝文,戚友芹. Ku 波段 PHEMT 单片低噪声放大器的设计与试验. 电子学报,1998,26(11):12-14
[24] 朱轩昂,林金庭. 2～6GHz 单片功率放大器. 固体电子学研究与进展,2001,21(2):35-37
[25] 陈新宇,蒋幼泉,黄念宁等. 16.5～20GHz PHEMT 单片功率放大器. 固体电子学研究与进展,2001,21(4):35-36
[26] 张斌,李拂晓,蒋幼泉. 7～18GHz 单片宽带大功率放大器. 固体电子学研究与进展,2003,23(3):54-56
[27] Markus Mayer, Holger Arthaber. RF Power Amplifier Design. Austria:Department of Electrical Measurements and Circuit Design Vienna University of Technology. 2001,658-705
[28] 黄香馥,陈天麒,张开智. 微波固态电路.成都:电子科技大学出版社,1998
[29] 白晓东. 微波晶体管放大器分析与设计.北京:清华大学出版社,2003
[30] 刘桂云.砷化镓射频功率 MESFET 大信号模型研究:[硕士学位论文],西安:西安电子科技大学,2005
[31] Gilles Dambrine, Alain Cappy, Heliodore, et al. A New Method for Determining the FET Small Signal Equivalent Circuit. IEEE Trans on MTT,1988,36(7):1151-1159
[32] Walter R. Curtice. GaAs MESFET Modeling and Nonlinear CAD. IEEE Trans Microwave Theory Tech, 1988,36(12):220-230
[33] Mc Camant A J et. al. An improved GaAs MESFET model for SPICE. IEEE Trans Microwave Theory Tech. 1990,13(6):237-822
[34] 高学邦. MESFET 和 PHEMT 大信号建模. 半导体情报,2000,37(4):44-51
[35] 胡建萍等. 一种新的 HEMT 小信号模型参数提取方法. 微波学报,2003,19(3):45-47
[36] 李洪芹,孙晓玮,夏冠群等. HEMT 小信号等效电路参数提取. 功能材料与器件学报,2000,6(1):34-42
[37] Shirakawa K, Oikawa H, Shimura et. al. An approach to determining an equivalent circuit for HEMT’s, IEEE Trans. MTT, 1995,43(3):212-216
[38] Thomas R.Turlington. Behavioral Modeling of Nonlinear RF and Microwave Devices. London: Artech House.2002,2351-2380
[39] Agilent Technologies. ADS 2003A User Guide Documentary. Munich: EEsof-EDA.2000,45-57
[40] Kayali S, Ponchak G, Shaw R. GaAs MMIC reliability assurance guideline for space applications. Colifornia: JPI Publication 1996,92-96
[41] Franz Sischka. The IC-CAP characterization basics handbook. Germany: Agilent department EEsof-EDA.2000,325-332
[42] 崔腾虎.一种 DC 到 28GHz 的低噪声硅基单片微波放大器的研制:[硕士学位论文].兰州:兰州大学,2006
[43] 刘晨晖,张慕义,高学邦. 毫米波 PHEMT 功率单片集成电路研究. 半导体技术,2006,31(3):194-197
[44] 薛良金. 毫米波工程基础.北京:国防工业出版社,1998
[2] 鲁高莲. MMIC 技术在卫星有效载荷上的应用. 半导体技术,1999,24(1):10-12
[3] Robertson I D, Lucyszyn S. RFIC and MMIC design and technology. London: The Institution of Electrical Engineers(IEE).2001,523-578
[4] 东熠. 蓬勃发展的 GaAs MMIC 讨论会侧记. 半导体情报,1995,32(1):34-35
[5] 费元春,陈世伟. 微波单片集成电路发展趋势. 北京理工大学学报,1996,16(3):297-302
[6] 程文芳,盛柏桢. 微波、毫米波砷化镓单片集成电路及其应用(3). 电子元器件应用,2002,4(10):397-398
[7] 陈效建. 迅速发展的微波与毫米单片集成电路 MMIC 技术. 全国微波毫米波会议论文集,2001,783-785
[8] 李效白. 砷化镓微波功率场效应晶体管及其集成电路.北京:科学出版社,1998
[9] Chul Soon Park. MMIC(RFIC)Design. Information and Communications University,2002
[10] D. Lingram, D. I. Stones, Jeffrey, H.Elliott, et. al. A 6W Ka-Band power module using MMIC power amplifier. IEEE MTT-45, 1997,21(3):2424-2430
[11] James M. Schellenberg. 1 and 2-Watt MMIC Power Amplifiers for Commercial K/Ka-Band Applications. IEEE MTT-S Digest, 2002,11(5):445-448
[12] Keith M, Simon, Ratana M. Wohlert, John P. Wendler, et. al. K Through Ka-Band Driver And Power Amplifiers. IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1996,5(3):29-32
[13] Shuoqi Chen, Sabyasachi Nayak, et. al. A Ka/Q-Band 2 Watt MMIC Power Amplifier Using Dual Recess 0.15μm PHEMT Process. IEEE MTT-S Digest, 2004,12(8):1669-1672
[14] A. Bessemoulin, J. Dishong, G. Clark, D. White, et. al. 1-Watt Broad Ka-band Ultra Small High Power Amplifier MMICs Using 0.25μm GaAs PHEMT. IEEE GaAs Digest, 2002,10(6):40-43
[15] Francois Y. Colomb, Aryeh Platzker. 2 and 4 Watt Ka-band GaAs PHEMT Power Amplifier MMICs. IEEE MTT-S Digest, 2003,7(5):843-846
[16] J. J. Komiak, et. al. Fully Monolithic 4 watt High Efficiency Ka-Band Power Amplifier. IEEE MTT-S Microwave Symp Digest, 1990,18(5):947-950
[17] M.K.Siddiqui et. al. A High Power Broadband Monolithic Power Amplifier for Ka-Band Ground Terminals. IEEE MTT-S Int. Microwave Symp Digest, 1999,23(10):947-950
[18] Fairchild et. al. Raython data sheet:RMPA39200,RMPA39300. 2001,235-238
[19] Y. Hwang, P. D. Chow, J. Lester, et. al. One Watt Q-Band Class A Pseudomorphic HEMT MMIC Amplifier. IEEE MTT-S Digest, 2000,10(5):805-809
[20] D.M.Silds,G. Rinke, et. al. Triquint data sheet:TGA1073-SCC, TGA1171-SCC, TGA1141-EPU. 2002,135-139
[21] Shuoqi Chen, Elias Reese, Keon-Shik Kong. A Balanced 2 Watt Compact PHEMT Power Amplifier MMIC for Ka-band Applications. IEEE MTT-S Microwave Symp Digest, 2003,15(9):847-850
[22] 丁奎章,于玲莉,何庆国. 8～12GHz 低噪声 PHEMT 单片集成电路. 半导体情报,1998,35(4):18-20
[23] 陈效建,乔宝文,戚友芹. Ku 波段 PHEMT 单片低噪声放大器的设计与试验. 电子学报,1998,26(11):12-14
[24] 朱轩昂,林金庭. 2～6GHz 单片功率放大器. 固体电子学研究与进展,2001,21(2):35-37
[25] 陈新宇,蒋幼泉,黄念宁等. 16.5～20GHz PHEMT 单片功率放大器. 固体电子学研究与进展,2001,21(4):35-36
[26] 张斌,李拂晓,蒋幼泉. 7～18GHz 单片宽带大功率放大器. 固体电子学研究与进展,2003,23(3):54-56
[27] Markus Mayer, Holger Arthaber. RF Power Amplifier Design. Austria:Department of Electrical Measurements and Circuit Design Vienna University of Technology. 2001,658-705
[28] 黄香馥,陈天麒,张开智. 微波固态电路.成都:电子科技大学出版社,1998
[29] 白晓东. 微波晶体管放大器分析与设计.北京:清华大学出版社,2003
[30] 刘桂云.砷化镓射频功率 MESFET 大信号模型研究:[硕士学位论文],西安:西安电子科技大学,2005
[31] Gilles Dambrine, Alain Cappy, Heliodore, et al. A New Method for Determining the FET Small Signal Equivalent Circuit. IEEE Trans on MTT,1988,36(7):1151-1159
[32] Walter R. Curtice. GaAs MESFET Modeling and Nonlinear CAD. IEEE Trans Microwave Theory Tech, 1988,36(12):220-230
[33] Mc Camant A J et. al. An improved GaAs MESFET model for SPICE. IEEE Trans Microwave Theory Tech. 1990,13(6):237-822
[34] 高学邦. MESFET 和 PHEMT 大信号建模. 半导体情报,2000,37(4):44-51
[35] 胡建萍等. 一种新的 HEMT 小信号模型参数提取方法. 微波学报,2003,19(3):45-47
[36] 李洪芹,孙晓玮,夏冠群等. HEMT 小信号等效电路参数提取. 功能材料与器件学报,2000,6(1):34-42
[37] Shirakawa K, Oikawa H, Shimura et. al. An approach to determining an equivalent circuit for HEMT’s, IEEE Trans. MTT, 1995,43(3):212-216
[38] Thomas R.Turlington. Behavioral Modeling of Nonlinear RF and Microwave Devices. London: Artech House.2002,2351-2380
[39] Agilent Technologies. ADS 2003A User Guide Documentary. Munich: EEsof-EDA.2000,45-57
[40] Kayali S, Ponchak G, Shaw R. GaAs MMIC reliability assurance guideline for space applications. Colifornia: JPI Publication 1996,92-96
[41] Franz Sischka. The IC-CAP characterization basics handbook. Germany: Agilent department EEsof-EDA.2000,325-332
[42] 崔腾虎.一种 DC 到 28GHz 的低噪声硅基单片微波放大器的研制:[硕士学位论文].兰州:兰州大学,2006
[43] 刘晨晖,张慕义,高学邦. 毫米波 PHEMT 功率单片集成电路研究. 半导体技术,2006,31(3):194-197
[44] 薛良金. 毫米波工程基础.北京:国防工业出版社,1998