MOSFETs力/磁传感器集成化研究
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摘要
多功能集成传感器以其体积小、重量轻及集成一体化等诸多优点具有广阔应用领域。本文采用MEMS工艺技术在n型单晶硅片上腐蚀硅杯,再利用CMOS工艺技术在硅膜上的最大应力区范围内制作四个沟道互相平行的MOSFET,其中两个P-MOSFET置于硅敏感膜的径向位置,而另外两个P-MOSFET置于硅敏感膜的横向位置,将这四个P-MOSFET集成在一个管芯上组成惠斯通电桥,当硅敏感膜受压力时,硅膜发生微小变形,两个径向的P-MOSFET沟道等效电阻阻值增大,两个横向P-MOSFET沟道等效电阻阻值减小,惠斯通电桥产生力敏输出。在距离源极0.7个沟道长度的位置引出霍尔输出电极,对单一MOSFET霍尔器件来说,在垂直磁场作用下,沟道空穴在洛仑兹力作用下发生偏转,霍尔输出极产生霍尔输出电压VH,霍尔输出电压随磁感应强度改变而发生改变,实现对磁场的测量。
本文介绍了MOSFETs力/磁传感器基本工作原理,并阐述了MOSFETs力/磁传感器的结构设计和制作工艺。在对MOSFETs力/磁传感器的I-V特性、温度特性进行了测试的基础上计算分析线性度、迟滞、重复性、灵敏度和精度等静态特性。实验结果表明,MOSFETs力/磁传感器的力敏灵敏度为11.5mV/100KPa,力敏线性度为1.36%F·S,力敏重复性为1.31%F·S,力敏迟滞为0.68%F·S,力敏精度为3.5%F·S;磁敏灵敏度为5.06mV/T,磁敏线性度为0.02%F·S,磁敏迟滞为1.01%F·S,磁敏重复性为1.48%F·S,磁敏精度为1.8%F·S,均符合设计要求。
国内外对于压/磁多功能传感器的集成一体化研究尚未见文献报道。本文针对压力传感器与磁传感器集成一体化进行实验研究,研究结果表明本文设计的MOSFETs力/磁传感器技术方案是可行的且有广泛的应用领域。
Multi-sensor is largely used in many field for its excellet small size, light weight and power intelligent function. In this paper, the Multi-sensor made by MEMS technology has square silicon film with four parallel n type MOSFETs, which are in the stress field. The sensor has two P type equivalent channel resistances of MOSFET locate at the longitudinal orientation, and the other two locate at the transverse orientation. They make up of Wheatstone bridge.When the pressure applied, the carriers drift ratio change corresponding, two longitudinal P type equivalent channel resistances of MOSFET turn to bigger, the other two become smaller. Then there is the voltage output, which changes the pressure signal into the corresponding electric signal. Two HALL poles are placed beside the gate about scale 0.7, for single MOS Hall element, the conductive layer is the exhausted layer. When the vertical filed applied, the HALL output voltage VH is produced on the output poles. The output voltage changed as the intensity of magnetic filed changed.
In this paper, the basic work theory of the MOSFETs pressure/magnetic sensor was discussed; the structure and the fabrication process of the MOSFETs pressure/magnetic sensor were discribled. In the experiment results, the I-V characteristic, temperature characteristic are tested. The experiment results indictate that the sensitivity of the pressure sensor is 11.5mV/100KPa, the magnetic sensitivity is 2.53mV/T; the pressure linearity is 1.36% F·S, the magnetic linearity is 0.02% F·S; the pressure lag is 0.68% F·S, the magnetic lag is 5.06% F·S; the pressure repeatability is 1.31% F·S, the magnetic repeatability is 1.48% F·S; the pressure precision is 3.5%F·S, the magetic precision is 1.8%F·S. The MOSFETs pressure/magnetic sensor meets the design demand.
There is rarely report about the pressure/magnetic Multi-sensor abroad and internal. In this paper, the research of the pressure sensor and magnetic sensor intergrating is very meaningful in the field of the intergrating of sensors.
本文介绍了MOSFETs力/磁传感器基本工作原理,并阐述了MOSFETs力/磁传感器的结构设计和制作工艺。在对MOSFETs力/磁传感器的I-V特性、温度特性进行了测试的基础上计算分析线性度、迟滞、重复性、灵敏度和精度等静态特性。实验结果表明,MOSFETs力/磁传感器的力敏灵敏度为11.5mV/100KPa,力敏线性度为1.36%F·S,力敏重复性为1.31%F·S,力敏迟滞为0.68%F·S,力敏精度为3.5%F·S;磁敏灵敏度为5.06mV/T,磁敏线性度为0.02%F·S,磁敏迟滞为1.01%F·S,磁敏重复性为1.48%F·S,磁敏精度为1.8%F·S,均符合设计要求。
国内外对于压/磁多功能传感器的集成一体化研究尚未见文献报道。本文针对压力传感器与磁传感器集成一体化进行实验研究,研究结果表明本文设计的MOSFETs力/磁传感器技术方案是可行的且有广泛的应用领域。
Multi-sensor is largely used in many field for its excellet small size, light weight and power intelligent function. In this paper, the Multi-sensor made by MEMS technology has square silicon film with four parallel n type MOSFETs, which are in the stress field. The sensor has two P type equivalent channel resistances of MOSFET locate at the longitudinal orientation, and the other two locate at the transverse orientation. They make up of Wheatstone bridge.When the pressure applied, the carriers drift ratio change corresponding, two longitudinal P type equivalent channel resistances of MOSFET turn to bigger, the other two become smaller. Then there is the voltage output, which changes the pressure signal into the corresponding electric signal. Two HALL poles are placed beside the gate about scale 0.7, for single MOS Hall element, the conductive layer is the exhausted layer. When the vertical filed applied, the HALL output voltage VH is produced on the output poles. The output voltage changed as the intensity of magnetic filed changed.
In this paper, the basic work theory of the MOSFETs pressure/magnetic sensor was discussed; the structure and the fabrication process of the MOSFETs pressure/magnetic sensor were discribled. In the experiment results, the I-V characteristic, temperature characteristic are tested. The experiment results indictate that the sensitivity of the pressure sensor is 11.5mV/100KPa, the magnetic sensitivity is 2.53mV/T; the pressure linearity is 1.36% F·S, the magnetic linearity is 0.02% F·S; the pressure lag is 0.68% F·S, the magnetic lag is 5.06% F·S; the pressure repeatability is 1.31% F·S, the magnetic repeatability is 1.48% F·S; the pressure precision is 3.5%F·S, the magetic precision is 1.8%F·S. The MOSFETs pressure/magnetic sensor meets the design demand.
There is rarely report about the pressure/magnetic Multi-sensor abroad and internal. In this paper, the research of the pressure sensor and magnetic sensor intergrating is very meaningful in the field of the intergrating of sensors.
引文
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[17] A. Kooser, R.L. Gunter, W.D. Delinger, T.L. Porter, M.P. Eastman. Gas sensing using embedded piezoresistive microcantilever sensors[J] . Sens. Actuators B.2004,99 (2–3):474–479.
[18] Desnical UV, Santic B. Trap-induced photoconductivity in semi-insulating gallium arsenide. Sesors and Actuators. 1989, 21(5), 76~79
[19] H. Mikoshiba . Stress-sensitive properties of silicon-gale MOS devices[J].Solid-State Electron.1981,24:221-232.
[20] Z.Z. Wang, J. Sushi and D. Collard . Piezoresistive simulation in MOSFETs. Sensors and Actuators A.1993,37-38:357-364.
[21] Terunobu Akiyama a, Andreas Tonin, Hans-Rudolf Hidber.Characterization of an integrated force. sensor based on a MOS transistor for applications in scanning force microscopy.Sensors and Actuators A.1998,64:1-6
[22] Vitor Garcia, Fabiano Fruett. A mechanical-stress sensitive differential amplifier. Sensors and Actuators A 132 (2006) 8–13.
[23]颜黄苹,冯勇建,许金海. MOS场效应管压力微传感器[J].传感器技术,2001,20(5):19~21
[24]岳瑞峰,刘理天,李志坚.集成MOS力敏运放压力传感器[J].半导体学报,2001,22(4):500~502
[25] E. Hynes, M. O’Neill, D. McAuliffe. Development and characterization of asurface micromachined FET pressure sensor on a CMOS process[J]. Sensors and Actuators. 1999,76:283–292
[26]张晓群,吕惠民.压力传感器的发展、现状与未来[J].半导体杂志, 2000, 25(1): 47-50.
[27]梁秀红,鞠玉林,任丙彦.扩散硅压阻传感技术的研究现状与发展趋势[J].河北工业大学成人教育学院学报, 2000, 15(2): 37-51.
[28]张海涛.霍尔效应及应用.温州职业技术学院学报. 2005,5(4):26-28
[29] R.S.Popovic,J.A.Flanagan,P.A.Besse.The future of magnetic sensors.Sensor and Actuators.1996,56:39-55
[30] B.Dieny et al., Magnetotransport properties of magnetically soft spinvalve structures, J.Magn.Mater, 1991, 94:L1-L5
[31] P.Ripka.Magnetic sensors for industrial and field applications.Sensor and Actuators A.1994 (41-42):394-397
[32] K. Mohria, T. Uchiyama, L.P. Shena, C.M. Caia, L.V. Paninab. Amorphous wire and CMOS IC-based sensitivemicro-magnetic sensors (MI sensor and SI sensor) for intelligent measurements and controls. Journal of Magnetism and Magnetic Materials. 2002, 249:351–356
[33] R.C. Gallagher and W.S. Corak. MOS Hall Element and It’s Use. Solid-State Electron, 1966, 9, p571
[34] FengNing, Erik Bruun. An offset-trimmable array of magnetic-field-sensitive MOS transistors. Sensors and Actuators A 58, (1997), 109-112
[35] H. Blanchard, F. De Montmollin, J. Hubin. Highly sensitive Hall sensor in CMOS technology. Sensors and Actuators 82(2000)144–148
[36]程姝丹,张强.霍尔效应的应用与发展.电气自动化,2007,4(78):78-82
[37] Popovic R S, et al. The future of magnetic sensors. Sensors and Actuators, 1996, A56 (1~2):39~55
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