暗场散射技术在晶圆表面缺陷检测中的新应用研究
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摘要
随着半导体加工制造技术的飞速发展,晶圆加工的特征尺寸正在从45nm向32nm以下发展,工艺的稳定性和可靠性都面临着严重的挑战。通过晶圆检测来监控工艺,减少产量损失,提高良率,就变得越发重要起来,晶圆缺陷检测的重要性已得到广泛的认知。
在各种晶圆缺陷检测的方式之中,无图案晶圆表面缺陷检测一直都占有很重要的地位。本论文在详细介绍利用无图案晶圆表面光学散射来进行缺陷检测的技术(第一、二章)的基础上,研究了现有方法的一些崭新应用。
本论文第三章中,对当前新工艺引入的一些新规格薄膜进行了一系列测试,通过尺度量化和稳定性两个方面,证实了现有晶圆表面缺陷检测仪器对这些新规格薄膜的适用性。
在本论文第四章,利用软件对底层薄雾散射信号的再分析能力,探索了利用薄雾信号的一些新应用。首先证实了薄雾信号强度与晶圆表面粗糙度之间存在着一定的对应关系,并通过一系列的量测,得出了它们之间关联曲线。这种应用可以成为测量晶圆表面粗糙度的一种新方法。此外,对于一些纳米级别的超微小缺陷,传统的缺陷检测方法无法检测。本论文通过一系列实验,证实通过分析薄雾信号可以实现对这类缺陷的检测。
最后在第五章对研究工作进做了总结,并对无图案晶圆表面光学散射技术的下一代发展进行了展望。
With the fast evolution of IC manufacture process technology, the technology node of wafer processing has been scaled down from 45nm to 32nm. The stability and reliability of wafer process will be most challenged. At the same time, process monitoring with wafer defect inspection way, reduction of yield loss, rising qualification rate, are becoming more and more important and critical. Therefore, the importance of wafer defect inspection has been widely recognized.
Among all kinds of wafer defect inspection technology, it plays an important role for unpatterned wafer surface inspection. This thesis introduces defect inspection technology by collecting scattering light on wafer surface (Chapter 1 & 2). Based on this technology, I did some investigation on several new application cases of current inspection method.
In chapter 3, I did some testing on some films with new specification. The applicability of current inspection tool on these new films was proved by both good sizing accuracy and good stability.
In chapter 4, the powerful software of haze processing was used in some new application cases. First, some kind of relationship between haze signal value and wafer surface roughness is proved, a correlation curve about it is created accordingly which data comes from series of testing. This case can be another new method to measure wafer surface roughness in Fab. Secondly, there are some kinds of extreme micro-defects which can not be detected by traditional inspection methods. Experimentations show the feasibility to detect such kind of defect by haze signal analysis.
There is a summary of all investigations done in chapter 5, also looked into the future of this technology.
在各种晶圆缺陷检测的方式之中,无图案晶圆表面缺陷检测一直都占有很重要的地位。本论文在详细介绍利用无图案晶圆表面光学散射来进行缺陷检测的技术(第一、二章)的基础上,研究了现有方法的一些崭新应用。
本论文第三章中,对当前新工艺引入的一些新规格薄膜进行了一系列测试,通过尺度量化和稳定性两个方面,证实了现有晶圆表面缺陷检测仪器对这些新规格薄膜的适用性。
在本论文第四章,利用软件对底层薄雾散射信号的再分析能力,探索了利用薄雾信号的一些新应用。首先证实了薄雾信号强度与晶圆表面粗糙度之间存在着一定的对应关系,并通过一系列的量测,得出了它们之间关联曲线。这种应用可以成为测量晶圆表面粗糙度的一种新方法。此外,对于一些纳米级别的超微小缺陷,传统的缺陷检测方法无法检测。本论文通过一系列实验,证实通过分析薄雾信号可以实现对这类缺陷的检测。
最后在第五章对研究工作进做了总结,并对无图案晶圆表面光学散射技术的下一代发展进行了展望。
With the fast evolution of IC manufacture process technology, the technology node of wafer processing has been scaled down from 45nm to 32nm. The stability and reliability of wafer process will be most challenged. At the same time, process monitoring with wafer defect inspection way, reduction of yield loss, rising qualification rate, are becoming more and more important and critical. Therefore, the importance of wafer defect inspection has been widely recognized.
Among all kinds of wafer defect inspection technology, it plays an important role for unpatterned wafer surface inspection. This thesis introduces defect inspection technology by collecting scattering light on wafer surface (Chapter 1 & 2). Based on this technology, I did some investigation on several new application cases of current inspection method.
In chapter 3, I did some testing on some films with new specification. The applicability of current inspection tool on these new films was proved by both good sizing accuracy and good stability.
In chapter 4, the powerful software of haze processing was used in some new application cases. First, some kind of relationship between haze signal value and wafer surface roughness is proved, a correlation curve about it is created accordingly which data comes from series of testing. This case can be another new method to measure wafer surface roughness in Fab. Secondly, there are some kinds of extreme micro-defects which can not be detected by traditional inspection methods. Experimentations show the feasibility to detect such kind of defect by haze signal analysis.
There is a summary of all investigations done in chapter 5, also looked into the future of this technology.
引文
[1]章志鸣,沈元华.光学[M].高等教育出版社,2000.
[2]赵凯华,钟锡华.光学[M].北京大学出版社,1984.
[3]Van de Hulst H C.Light Scattering by Small Particles[M].Chapman and Hall,1957.
[4]Bohren C F,Huffman D R.Absorption and Scattering of Light by Small Particles[M].JOHN & SONS Inc,1983.
[5]陈军,尤政.激光散射理论及其在计量测试中的应用[J].激光技术,1996,20(6):359-365.
[6]关丽,田贵才.小粒子Mie散射理论及应用[J].通化师范学院学报,2001,22(2):30-33.
[7]Harvey J E.Transfer Function Characterization of Scattering Surfaces[J].Opt Soc Am,1976.
[8]陈军,尤政.硅中微体缺陷激光测试技术的理论与实验研究[J].红外与毫米波学报,1997,16(3):174-178.
[9]任智斌,卢振武.微球体光散射的研究[J].红外与激光工程,2004,22(4):401-404.
[10]孙国正,孙强.基于Mie散射理论的微球体颗粒半径分析[J].红外与激光工程,2005,34(4):495-498.
[11]张厥宗.硅单晶抛光片的加工技术[M].化学工业出版社,2005.
[12]Manual PSL Film Curve Creation Procedure[S].2005.
[13]SEMI M52.Guide for Specifying Scanning Surface Inspection Systems for Silicon Wafers for the 130 nm Technology Generation[S].2000.
[14]薛谦忠,吴振森.粗糙介质面对光波束的散射理论[J].西安电子科技大学学报,2000,27(2):166-170.
[15]陈淑妍.光学散射法表面特征的测量与分析[J].红外与激光工程,2006,35(1):82-85.
[16]D.J.Whitehouse.Surface Metrology[J].Measurement Science and Technology,1997,8:955-972.
[2]赵凯华,钟锡华.光学[M].北京大学出版社,1984.
[3]Van de Hulst H C.Light Scattering by Small Particles[M].Chapman and Hall,1957.
[4]Bohren C F,Huffman D R.Absorption and Scattering of Light by Small Particles[M].JOHN & SONS Inc,1983.
[5]陈军,尤政.激光散射理论及其在计量测试中的应用[J].激光技术,1996,20(6):359-365.
[6]关丽,田贵才.小粒子Mie散射理论及应用[J].通化师范学院学报,2001,22(2):30-33.
[7]Harvey J E.Transfer Function Characterization of Scattering Surfaces[J].Opt Soc Am,1976.
[8]陈军,尤政.硅中微体缺陷激光测试技术的理论与实验研究[J].红外与毫米波学报,1997,16(3):174-178.
[9]任智斌,卢振武.微球体光散射的研究[J].红外与激光工程,2004,22(4):401-404.
[10]孙国正,孙强.基于Mie散射理论的微球体颗粒半径分析[J].红外与激光工程,2005,34(4):495-498.
[11]张厥宗.硅单晶抛光片的加工技术[M].化学工业出版社,2005.
[12]Manual PSL Film Curve Creation Procedure[S].2005.
[13]SEMI M52.Guide for Specifying Scanning Surface Inspection Systems for Silicon Wafers for the 130 nm Technology Generation[S].2000.
[14]薛谦忠,吴振森.粗糙介质面对光波束的散射理论[J].西安电子科技大学学报,2000,27(2):166-170.
[15]陈淑妍.光学散射法表面特征的测量与分析[J].红外与激光工程,2006,35(1):82-85.
[16]D.J.Whitehouse.Surface Metrology[J].Measurement Science and Technology,1997,8:955-972.