TiN薄膜的磁控溅射法制备及其光学性能研究
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摘要
在TiN薄膜的基本物理性能的基础上,本文提出制备具有低辐射和阳光控制的设想的TiN镀膜玻璃。
本文采用反应磁控溅射法制备TiN薄膜,并分别在沉积时间、工作总压、溅射功率、氮气分压、基底温度,和衬底偏压上进行参数控制,研究各个参数控制条件下TiN薄膜沉积速率、致密性及微观结构、形貌、成分、生长取向的规律;分析TiN薄膜在紫外-可见-近红外波段的透光性能,以及各种因素对氮化钛薄膜电阻率和中远红外光反射率的影响。
研究结果表明:对TiN薄膜结构、形貌和性能影响最大的是氮气分压、基底温度和衬底偏压。本文着重对这三个参数对TiN薄膜微观结构、生长取向及性能的影响进行了较为深入的分析和研究,并获得了一些相关规律。此外也讨论了靶材烧蚀坑对薄膜质量的影响。
对氮化钛薄膜的光学性能研究表明:随着沉积时间、氩氮比和系统偏压的增加,薄膜对紫外-可见-近红外光的透光率呈有规律地下降,表现出很好的对可见光和近红外光的光谱选择性。基底温度的升高使薄膜的透光性小幅增强。可见光的透光率在35%～57%,表现出很好的透光性能。薄膜的方块电阻迅速从无穷大下降到接近导体的电阻,同时使其对中远红外光的反射率大幅升高。在镀膜时间为4min,总压为0.4Pa,靶功率为96W、基底温度为300℃、偏压为0V、氩氮流量比λ_(Ar/N2)=23的条件下沉积的TiN薄膜表现出良好的阳光控制和低辐射性能。
New type of energy-saving coating glass with low-e and solar control functions was supposed in the thesis on the base of basic physical properties,especially excellent electrical property of TiN films.
TiN films were deposited by reactive magnetron sputtering.The deposition rate,compactivity,microstructure,morphology,component, growth orientation of TiN films are affected regularly through controlling some parameters including deposition time,air pressure, sputtring power,nitrogen partial pressure,substrate temperature and bias voltage.The optical transmittance of TiN film in UV-VIS-NIR wave band was analyzed in the thesis,and the influence of sheet resistance and IR reflectivity by the sputtering parameters.
Result indicate nitrogen partial pressure,substrate temperature and bias voltage are more important.Aiming at the effects on the microstructure,growth orientation and properties of TiN films,the thesis emphasized on the three parameters so as to acquire some laws for them. In addition,the thesis discussed the influence of target erosion lane on TiN film quality.
The research of optical property of TiN film indicate the optical transmittance in UV-VIS-NIR wave band of TiN film decrease regularly with the increase of deposite time,nitrogen partial pressure and bias voltage,and behaves good spectrum selectivity.Low increase of TiN film optical transmittance when base temperature rise up.The VIS optical transmittance is between 35%and 57%.thesheet resistance of TiN film sharply down from∞to low value,then the IR reflectivity quickly climb up.Deposition TiN films at the parameters of t=4min, Pressure=0.4Pa,Power=96W,T=300℃,U_(bias)=0V,λ_(Ar/N2)=23 perform good proporty of low-e and solar control functions.
本文采用反应磁控溅射法制备TiN薄膜,并分别在沉积时间、工作总压、溅射功率、氮气分压、基底温度,和衬底偏压上进行参数控制,研究各个参数控制条件下TiN薄膜沉积速率、致密性及微观结构、形貌、成分、生长取向的规律;分析TiN薄膜在紫外-可见-近红外波段的透光性能,以及各种因素对氮化钛薄膜电阻率和中远红外光反射率的影响。
研究结果表明:对TiN薄膜结构、形貌和性能影响最大的是氮气分压、基底温度和衬底偏压。本文着重对这三个参数对TiN薄膜微观结构、生长取向及性能的影响进行了较为深入的分析和研究,并获得了一些相关规律。此外也讨论了靶材烧蚀坑对薄膜质量的影响。
对氮化钛薄膜的光学性能研究表明:随着沉积时间、氩氮比和系统偏压的增加,薄膜对紫外-可见-近红外光的透光率呈有规律地下降,表现出很好的对可见光和近红外光的光谱选择性。基底温度的升高使薄膜的透光性小幅增强。可见光的透光率在35%～57%,表现出很好的透光性能。薄膜的方块电阻迅速从无穷大下降到接近导体的电阻,同时使其对中远红外光的反射率大幅升高。在镀膜时间为4min,总压为0.4Pa,靶功率为96W、基底温度为300℃、偏压为0V、氩氮流量比λ_(Ar/N2)=23的条件下沉积的TiN薄膜表现出良好的阳光控制和低辐射性能。
New type of energy-saving coating glass with low-e and solar control functions was supposed in the thesis on the base of basic physical properties,especially excellent electrical property of TiN films.
TiN films were deposited by reactive magnetron sputtering.The deposition rate,compactivity,microstructure,morphology,component, growth orientation of TiN films are affected regularly through controlling some parameters including deposition time,air pressure, sputtring power,nitrogen partial pressure,substrate temperature and bias voltage.The optical transmittance of TiN film in UV-VIS-NIR wave band was analyzed in the thesis,and the influence of sheet resistance and IR reflectivity by the sputtering parameters.
Result indicate nitrogen partial pressure,substrate temperature and bias voltage are more important.Aiming at the effects on the microstructure,growth orientation and properties of TiN films,the thesis emphasized on the three parameters so as to acquire some laws for them. In addition,the thesis discussed the influence of target erosion lane on TiN film quality.
The research of optical property of TiN film indicate the optical transmittance in UV-VIS-NIR wave band of TiN film decrease regularly with the increase of deposite time,nitrogen partial pressure and bias voltage,and behaves good spectrum selectivity.Low increase of TiN film optical transmittance when base temperature rise up.The VIS optical transmittance is between 35%and 57%.thesheet resistance of TiN film sharply down from∞to low value,then the IR reflectivity quickly climb up.Deposition TiN films at the parameters of t=4min, Pressure=0.4Pa,Power=96W,T=300℃,U_(bias)=0V,λ_(Ar/N2)=23 perform good proporty of low-e and solar control functions.
引文
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