半导体激光器腔面钝化的研究
摘要
半导体激光器腔面钝化主要是通过引入某种原子与工作物质表面的悬挂键结合形成较稳定的、新的化学键,即形成一个稳定的钝化层。
本论文以Ⅲ-Ⅴ族化合物半导体激光器为研究对象,研究腔面钝化层不同制备方法,如含硫溶液钝化、氧钝化、氢钝化、氮钝化、硫化氢等离子体钝化。叙述钝化工艺的产生背景及工艺方法。详细对比硫溶液钝化、氮钝化、硫化氢等离子体钝化在不同钝化条件下的钝化效果:硫溶液钝化腔面多种钝化液中,(NH_4)_2S+t-C_4H_9OH溶液的钝化效果最佳;用氮钝化、硫化氢等离子体钝化时,N_2和H_2流量比为20:1、H_2S和Ar流量比为1:1。论文归纳各种钝化工艺的存在的问题,提出可能的解决方法。
The passivation technology of the cavity surface of semiconductor lasers is mainly about :By means of drawing into the integration of certain atom and dangling bonds of cavity facet to form new and stable chemical bond, it refers to form a stable passive layer.
This thesis hasⅢ-Ⅳcompound semiconductor laser as the research object, researching different passivation methods of the cavity surface of semiconductor lasers,such as sulfur-containing solution passivation、oxygen passivation、hydrogen passivation、nitrogen passivation and hydrogen sulfide plasma passivation. This thesis describes the background of the passivation technology and passivation process . Under different passivation conditions, we detailedly comparied the passivation impact of sulfur-containing solution passivation、nitrogen passivation、hydrogen sulfide plasma passivation. A variety of sulfur-containing solution passivated the cavity surface,that (NH_4)_2S + t-C_4H_9OH solution blunt of the best results; Passivation with nitrogen or hydrogen sulfide plasma, N_2 and H_2 flux ratio is 20:1, H_2S and Ar flux ratio is 1:1. The thesis summarized the problems of various passivation processes and feasible solution.
本论文以Ⅲ-Ⅴ族化合物半导体激光器为研究对象,研究腔面钝化层不同制备方法,如含硫溶液钝化、氧钝化、氢钝化、氮钝化、硫化氢等离子体钝化。叙述钝化工艺的产生背景及工艺方法。详细对比硫溶液钝化、氮钝化、硫化氢等离子体钝化在不同钝化条件下的钝化效果:硫溶液钝化腔面多种钝化液中,(NH_4)_2S+t-C_4H_9OH溶液的钝化效果最佳;用氮钝化、硫化氢等离子体钝化时,N_2和H_2流量比为20:1、H_2S和Ar流量比为1:1。论文归纳各种钝化工艺的存在的问题,提出可能的解决方法。
The passivation technology of the cavity surface of semiconductor lasers is mainly about :By means of drawing into the integration of certain atom and dangling bonds of cavity facet to form new and stable chemical bond, it refers to form a stable passive layer.
This thesis hasⅢ-Ⅳcompound semiconductor laser as the research object, researching different passivation methods of the cavity surface of semiconductor lasers,such as sulfur-containing solution passivation、oxygen passivation、hydrogen passivation、nitrogen passivation and hydrogen sulfide plasma passivation. This thesis describes the background of the passivation technology and passivation process . Under different passivation conditions, we detailedly comparied the passivation impact of sulfur-containing solution passivation、nitrogen passivation、hydrogen sulfide plasma passivation. A variety of sulfur-containing solution passivated the cavity surface,that (NH_4)_2S + t-C_4H_9OH solution blunt of the best results; Passivation with nitrogen or hydrogen sulfide plasma, N_2 and H_2 flux ratio is 20:1, H_2S and Ar flux ratio is 1:1. The thesis summarized the problems of various passivation processes and feasible solution.
引文
[1]王路威.半导体激光器的发展及其应用.成都大学学报(自然科学版),2003,22(3):33-38
[2]黄德修,刘雪峰.半导体激光器及其应用.北京:国防工业出版社,1999:113-149
[3]曲宙,刘洋,刘博.大功率半导体激光器的军事应用.光机电信息,2006,2:52-55
[4]苏华,李守春.半导体激光器在医疗上的应用及其前景展望.吉林大学学报(信息科学版),2006,24(5):502-506
[5]杜宝勋.半导体激光器基础.北京:兵器工业出版社,2004:17-23
[6]陆家和.表面分析技术.北京:清华大学出版社,1988:143-187
[7]Hideyoshi Horie,Hirotaka Ohta,et al.Reliability Improvement of 980-nm Laser Diodes with a New Facet Passivation Process.IEEE Jouranal of Selected Topics in Quantum Electroni,1999,5(3):832-838
[8]Eckard Deichsel.Fabrication and Characterization of Laser Diodes with Native Oxide as Surface Passivation.Dept.of Optoelectronics,University of Ulm,1999:2-4
[9]J.Kwo,D.W.Murphy,M.Hong,et al.Passivation of GaAs using.Ga_2O_3.12x.Gd_2O_3.x,0＜x＜1.0 films.Applied Physics Letters,1999,75(8):1116-1118
[10]M.S.Carpenter,M.R.Melloch,M.S.Lundstrom,et al.Effects of Na_2S and(NH_4)_2Sedge passivation treatments on the dark current-voltage characteristics of GaAs pn diodes,Appl.Phys.Lett,1988,52(25):2157-2159.
[11]C.J.Sandroff,M.S.Hegde,L.A.Farrow,et al.Electronic passivation of GaAs surfaces through the formation of arsenic-sulfur bonds.Appl.Phys.Lett.1988,54(44):362-364.
[12]H.Oigawa,J.F.Fan,Y.Nannichi,H.Sugahara,and M.Oshima,Japanese J.Appl.Phys.1991,30(3A),L332-L325
[13]Y.Wang,Y.Darici,P.H.Holloway,J.Appl.Phys.1921,71(16):2746-2756.
[14]E.Yablonovithc,C.J.Sandroff,R.Bhat,and T.Gmitter,Appl.Phys.Lett,1987,51(6):439-441.
[15]Vasily N.Bessolov,Elena V.Konenkova,and Mikhail V.Lebedev.Sulfidzationg in Alcoholic Solutions:A New Surface Passivation Method for GaAs.Sci.Technol.B.,1993,11(10):681-683
[16]X.Y.Hou,W.Z.Cai,Z.Q.He,et al.Electrochemical sulfur passivation of GaAs.Appl.Phys.Lett.1992,60(18):2252-2254
[17]Xiaoyuan Hou,Xiying Chen,Zheshen Li,et al.Passivation of GaAs surface by sulfur glow discharge.Appl.Phys.Lett.1996,69(10):1129-1131
[18]VASILY N.BESSOLOV,MIKHAIL V.LEBEDEV,YURI M.SHERNYAKOV,et al.Improvement of Catastrophic Optical Damage Level of InGaAs/AlGaAs SQW Lasers by Sulfur Treatment in Al Coholic Solutions.
[19]袁泽亮,胡海天,李哲深等.中性溶液钝化GaAs(100)表面的研究.物理学报,1998,47(1):68-73
[20]田增霞,崔碧峰,徐晨等.808 am半导体激光器腔面硫钝化工艺研究.固体电子学研究与进展,2006,26(2):201-204
[21]韩冰,王妮丽,唐恒敬等.(NH_4)_2S硫化处理后InGaAs表面特性的研究.激光与红外,2007,37(S):944-946
[22]刘春玲,张晶,么艳平等.多种含硫溶液钝化(100)GaAs表面的实验研究.发光学报.2007,28(6):904-906
[23]Robert W.Lambert,Tim Ayling,Alec F.Hendry,Joan M,et al.Facet-Passivation Processes for the Improvement of Al-Containing Semiconductor Laser Diodes.Jounal of Lightwave Technology,2006,24(2):956-961
[24]Ashonita Chavan,Radosveta Radionova,Greg W.Charache,et al.Comparison of Facet Temperature and Degradation of Unpumped and Passivated Facets of Al-Free 940 nm Lasers Using Photoluminescence,IEEE Journal of Quatum Electronics,2005,41(5):630-635
[25]Lu.E.D,Zhang.F.P,Xu.S.H,et al.A sulfur passivation for GaAs surface by an organic molecular,CH_3CSNH_2 treatment.Appl.Phys.Lett.,1996,69(15):2281-2283
[26]陆尔东,张发培,余小江等.GaAs表面硫化学钝化:CH_3CSNH_2处理新探.物理学报,1997,46(5)1022-1027
[27]陆尔东,徐彭寿,张新夷等.CH_3SNH_2/NH_4OH钝化GaAs(100)表面的XPS表征.中国科学技术大学学报,1996,26(4):480-484
[28]林秀华,徐富春,江炳熙.用CH_3CSNH_2钝化GaP表面特性的研究.发光学报,2000,21(2):173-175
[29]V.N.Bessolov,M.V.Lebedev.Chalcogenide passivation of Ⅲ-Ⅴ semiconductor surfaces.SEMICONDUCTORS,1998,32(11):1141-1156
[30]Euijoon Yoon,Richard A.Gottscho,Vincent M.Donnelly,et al.GaAs surface modification by room-temperature hydrogen plasma Passivation.hppl.Phys.Lett,1992,60(21):2681-2683
[31]Eray S.Aydil,Zhen Zhou,Konstantinos P.Giapis,et al.Real-time,in sifu monitoring of surface reactions during plasma passivation of GaAs.Appl.Phys.Lett,1993,62(24):3156-3158
[32]G.Bruno,M.Losurdo,and P.Capezzuto.Hydrogen plasma passivation of InP:Real time ellipsometry monitoring and ex situ photoluminescence measurements.Appl.Phys.Lett,1996,69(5):684-687
[33]L.A.DeLouise.Nitrdation of Gahs(110) using energetic N~+ and N_2~+ ion beams.J.Vac.SCI.Technol.A,1993,11(3):609-614
[34]Akio Hara,Ryuichi Nakamura,Hideaki Ikoma.Nitridation of GaAs using helicon-wave excited and inductively coupled nitrogen plasma.J.Vac.Sci.Technol.B,1998,16(1):184-192
[35]M.Losurdo,P.Capezzuto,G.Bruno.Study of the mechanisms of GaN film growth on GaAs surfaces by thermal and plasma nitridation.J.Vac.Sci.Technol.B,1998,16(5.):2665-2671
[36]M.Losurdo,P.Capezzuto,G.Bruno.Chemistry and kinetics of the GaN formation by plasma nitridation of GaAs:An in situ real-time ellipsometric study.The American Physical Society.1998,58(23):878-888
[37]M.Losurdo,P.Capezzuto,G.Bruno.Ⅲ-Ⅴ surface plasma nitridation:A challenge for Ⅲ-Ⅴ nitride epigrowth.J.Vac.Sci.Technol.A,1999,17(4.):2194-2201
[38]C.F.Carlstr(o|¨)m,S.Ananda.Characterization of damage in InP dry etched using nitrogen containing chemistries.J.Vac.Sci.Technol.B,2001,19(5):.1905-1910
[39]K.M.Yu,W.Walukiewicz,J.Wu,et al.Synthesis of InNxPl-x thin films by N ion implantation.Appl.Phys.Lett,2001,78(9):1076-1079
[40]Sanguan Anantathanasarn,Shin-ya Ootomo,Tamotsu Hashizume,et al.Surface passivation of GaAs by ultra-thin cubic GaN layer.Applied Surface Science,2000:456-461
[41]V.L.Berkovits,V.P.Ulin,M.Losurdo,et al.Wet chemical nitiridation of GaAs(100)by hydrazube solution for surface passivation.Applied Physics Letters,2002,80(20):3739-3741
[42]V.N.Bessolov and M.V.Lebedev.Chalcogenide passivation of Ⅲ-Ⅴ semiconductor surfaces.Semiconductors.1998,32(11):1141-1154
[43]LIU Chun-Ling,YAO Yan-ping,WANG Chun-wu,et al.Study on Hydrogen Sulfide Plasma Passivation of 790nm LD Cavity Surface,Chinese Optics Letters,2008,6(3):183-185
[44]邓婷,黄光周,刘雄英等.高反膜镀制工艺研究的新进展.真空电子技术,2009,3:32-36
[45]舒雄文,徐晨,徐遵图等.808 nm大功率半导体激光器腔而光学膜工艺[J].半导体学报,2005,26(3):571-575
[46]吴根柱,齐鸣,李爱珍等.半导体激光器后腔面高反射涂层的研究.功能材料与器件学报,2003,9(3):203-205
[47]袁景梅,汤兆胜,易葵等.高折射率材料吸收特性对193nmHfO_2/SiO_2,Y_2O_3/SiO_2,Al_2O_3/SiO_2多层膜反射特性的影响.中国激光,2004,31(12):1469-1472
[48]LIU Chun-Ling,WANG Chun-wu,YAO Yan-ping et al.Process Investigation of a-Si:H thin films prepared by DC magnetron spattering.SPIE,2008,Vol.6825.
[49]刘春玲,王春武,么艳平等.硫化的激光器腔面上溅射ZnS钝化膜的研究.光电子·激光,2008,19(1):14-16
[2]黄德修,刘雪峰.半导体激光器及其应用.北京:国防工业出版社,1999:113-149
[3]曲宙,刘洋,刘博.大功率半导体激光器的军事应用.光机电信息,2006,2:52-55
[4]苏华,李守春.半导体激光器在医疗上的应用及其前景展望.吉林大学学报(信息科学版),2006,24(5):502-506
[5]杜宝勋.半导体激光器基础.北京:兵器工业出版社,2004:17-23
[6]陆家和.表面分析技术.北京:清华大学出版社,1988:143-187
[7]Hideyoshi Horie,Hirotaka Ohta,et al.Reliability Improvement of 980-nm Laser Diodes with a New Facet Passivation Process.IEEE Jouranal of Selected Topics in Quantum Electroni,1999,5(3):832-838
[8]Eckard Deichsel.Fabrication and Characterization of Laser Diodes with Native Oxide as Surface Passivation.Dept.of Optoelectronics,University of Ulm,1999:2-4
[9]J.Kwo,D.W.Murphy,M.Hong,et al.Passivation of GaAs using.Ga_2O_3.12x.Gd_2O_3.x,0＜x＜1.0 films.Applied Physics Letters,1999,75(8):1116-1118
[10]M.S.Carpenter,M.R.Melloch,M.S.Lundstrom,et al.Effects of Na_2S and(NH_4)_2Sedge passivation treatments on the dark current-voltage characteristics of GaAs pn diodes,Appl.Phys.Lett,1988,52(25):2157-2159.
[11]C.J.Sandroff,M.S.Hegde,L.A.Farrow,et al.Electronic passivation of GaAs surfaces through the formation of arsenic-sulfur bonds.Appl.Phys.Lett.1988,54(44):362-364.
[12]H.Oigawa,J.F.Fan,Y.Nannichi,H.Sugahara,and M.Oshima,Japanese J.Appl.Phys.1991,30(3A),L332-L325
[13]Y.Wang,Y.Darici,P.H.Holloway,J.Appl.Phys.1921,71(16):2746-2756.
[14]E.Yablonovithc,C.J.Sandroff,R.Bhat,and T.Gmitter,Appl.Phys.Lett,1987,51(6):439-441.
[15]Vasily N.Bessolov,Elena V.Konenkova,and Mikhail V.Lebedev.Sulfidzationg in Alcoholic Solutions:A New Surface Passivation Method for GaAs.Sci.Technol.B.,1993,11(10):681-683
[16]X.Y.Hou,W.Z.Cai,Z.Q.He,et al.Electrochemical sulfur passivation of GaAs.Appl.Phys.Lett.1992,60(18):2252-2254
[17]Xiaoyuan Hou,Xiying Chen,Zheshen Li,et al.Passivation of GaAs surface by sulfur glow discharge.Appl.Phys.Lett.1996,69(10):1129-1131
[18]VASILY N.BESSOLOV,MIKHAIL V.LEBEDEV,YURI M.SHERNYAKOV,et al.Improvement of Catastrophic Optical Damage Level of InGaAs/AlGaAs SQW Lasers by Sulfur Treatment in Al Coholic Solutions.
[19]袁泽亮,胡海天,李哲深等.中性溶液钝化GaAs(100)表面的研究.物理学报,1998,47(1):68-73
[20]田增霞,崔碧峰,徐晨等.808 am半导体激光器腔面硫钝化工艺研究.固体电子学研究与进展,2006,26(2):201-204
[21]韩冰,王妮丽,唐恒敬等.(NH_4)_2S硫化处理后InGaAs表面特性的研究.激光与红外,2007,37(S):944-946
[22]刘春玲,张晶,么艳平等.多种含硫溶液钝化(100)GaAs表面的实验研究.发光学报.2007,28(6):904-906
[23]Robert W.Lambert,Tim Ayling,Alec F.Hendry,Joan M,et al.Facet-Passivation Processes for the Improvement of Al-Containing Semiconductor Laser Diodes.Jounal of Lightwave Technology,2006,24(2):956-961
[24]Ashonita Chavan,Radosveta Radionova,Greg W.Charache,et al.Comparison of Facet Temperature and Degradation of Unpumped and Passivated Facets of Al-Free 940 nm Lasers Using Photoluminescence,IEEE Journal of Quatum Electronics,2005,41(5):630-635
[25]Lu.E.D,Zhang.F.P,Xu.S.H,et al.A sulfur passivation for GaAs surface by an organic molecular,CH_3CSNH_2 treatment.Appl.Phys.Lett.,1996,69(15):2281-2283
[26]陆尔东,张发培,余小江等.GaAs表面硫化学钝化:CH_3CSNH_2处理新探.物理学报,1997,46(5)1022-1027
[27]陆尔东,徐彭寿,张新夷等.CH_3SNH_2/NH_4OH钝化GaAs(100)表面的XPS表征.中国科学技术大学学报,1996,26(4):480-484
[28]林秀华,徐富春,江炳熙.用CH_3CSNH_2钝化GaP表面特性的研究.发光学报,2000,21(2):173-175
[29]V.N.Bessolov,M.V.Lebedev.Chalcogenide passivation of Ⅲ-Ⅴ semiconductor surfaces.SEMICONDUCTORS,1998,32(11):1141-1156
[30]Euijoon Yoon,Richard A.Gottscho,Vincent M.Donnelly,et al.GaAs surface modification by room-temperature hydrogen plasma Passivation.hppl.Phys.Lett,1992,60(21):2681-2683
[31]Eray S.Aydil,Zhen Zhou,Konstantinos P.Giapis,et al.Real-time,in sifu monitoring of surface reactions during plasma passivation of GaAs.Appl.Phys.Lett,1993,62(24):3156-3158
[32]G.Bruno,M.Losurdo,and P.Capezzuto.Hydrogen plasma passivation of InP:Real time ellipsometry monitoring and ex situ photoluminescence measurements.Appl.Phys.Lett,1996,69(5):684-687
[33]L.A.DeLouise.Nitrdation of Gahs(110) using energetic N~+ and N_2~+ ion beams.J.Vac.SCI.Technol.A,1993,11(3):609-614
[34]Akio Hara,Ryuichi Nakamura,Hideaki Ikoma.Nitridation of GaAs using helicon-wave excited and inductively coupled nitrogen plasma.J.Vac.Sci.Technol.B,1998,16(1):184-192
[35]M.Losurdo,P.Capezzuto,G.Bruno.Study of the mechanisms of GaN film growth on GaAs surfaces by thermal and plasma nitridation.J.Vac.Sci.Technol.B,1998,16(5.):2665-2671
[36]M.Losurdo,P.Capezzuto,G.Bruno.Chemistry and kinetics of the GaN formation by plasma nitridation of GaAs:An in situ real-time ellipsometric study.The American Physical Society.1998,58(23):878-888
[37]M.Losurdo,P.Capezzuto,G.Bruno.Ⅲ-Ⅴ surface plasma nitridation:A challenge for Ⅲ-Ⅴ nitride epigrowth.J.Vac.Sci.Technol.A,1999,17(4.):2194-2201
[38]C.F.Carlstr(o|¨)m,S.Ananda.Characterization of damage in InP dry etched using nitrogen containing chemistries.J.Vac.Sci.Technol.B,2001,19(5):.1905-1910
[39]K.M.Yu,W.Walukiewicz,J.Wu,et al.Synthesis of InNxPl-x thin films by N ion implantation.Appl.Phys.Lett,2001,78(9):1076-1079
[40]Sanguan Anantathanasarn,Shin-ya Ootomo,Tamotsu Hashizume,et al.Surface passivation of GaAs by ultra-thin cubic GaN layer.Applied Surface Science,2000:456-461
[41]V.L.Berkovits,V.P.Ulin,M.Losurdo,et al.Wet chemical nitiridation of GaAs(100)by hydrazube solution for surface passivation.Applied Physics Letters,2002,80(20):3739-3741
[42]V.N.Bessolov and M.V.Lebedev.Chalcogenide passivation of Ⅲ-Ⅴ semiconductor surfaces.Semiconductors.1998,32(11):1141-1154
[43]LIU Chun-Ling,YAO Yan-ping,WANG Chun-wu,et al.Study on Hydrogen Sulfide Plasma Passivation of 790nm LD Cavity Surface,Chinese Optics Letters,2008,6(3):183-185
[44]邓婷,黄光周,刘雄英等.高反膜镀制工艺研究的新进展.真空电子技术,2009,3:32-36
[45]舒雄文,徐晨,徐遵图等.808 nm大功率半导体激光器腔而光学膜工艺[J].半导体学报,2005,26(3):571-575
[46]吴根柱,齐鸣,李爱珍等.半导体激光器后腔面高反射涂层的研究.功能材料与器件学报,2003,9(3):203-205
[47]袁景梅,汤兆胜,易葵等.高折射率材料吸收特性对193nmHfO_2/SiO_2,Y_2O_3/SiO_2,Al_2O_3/SiO_2多层膜反射特性的影响.中国激光,2004,31(12):1469-1472
[48]LIU Chun-Ling,WANG Chun-wu,YAO Yan-ping et al.Process Investigation of a-Si:H thin films prepared by DC magnetron spattering.SPIE,2008,Vol.6825.
[49]刘春玲,王春武,么艳平等.硫化的激光器腔面上溅射ZnS钝化膜的研究.光电子·激光,2008,19(1):14-16