InP基HBT的理论研究以及光接收机前端单片集成器件的制备
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摘要
本论文的工作是围绕任晓敏教授承担的教育部高等学校博士学科点专项科研基金“基于RCE光探测器和HBT的单片集成(OEIC)高速光接收模块”(项目编号：20020013010)、任晓敏教授为首席科学家的国家重点基础研究发展计划(973计划)项目“新一代通信光电子集成器件及光纤的重要结构工艺创新与基础研究”(项目编号：2003CB314900)等项目展开的。
InP基异质结双极晶体管(HBT)在光纤通信等领域具有极其广阔的应用前景，并且可以与光电探测器等光器件单片集成，因而深入系统地研究InP基HBT器件具有极其重要的意义。
本论文的工作主要是围绕着InP基HBT器件的理论研究、实验制备及其与PIN光电探测器的单片集成而展开的。现将本论文所包含的研究成果总结如下：
(1)系统地研究并总结了HBT理论模型中常见物理量的计算，并结合已有文献资料总结出了InP与In_(0.53)Ga(0.47)As材料的迁移率公式，这对InP基HBT的各种理论仿真计算有着重要的作用；
(2)研究了在大电流密度下发生Kirk效应时对InP基HBT直流特性和高频特性的影响，得出Kirk效应的发生会导致InP基HBT的直流增益和高频特性均变差。与此同时，研究了在发生Kirk效应后，在BC结B区侧产生的零电场区域厚度X_S对τ_b、f_T与f_(max)的影响，并得出X_S相对于X_B来说是不可忽略的，这对于基区厚度很薄而C区又很厚的情况时，在τ_b的计算中，X_S所占的权重将会变得更加重要；
(3)研究了InP基HBT的基区在非均匀掺杂情况下对其各性能参数的影响。首先研究了非均匀掺杂时在基区的内建场分布情况，并得出，在对基区进行非均匀掺杂时所产生的加速电场与减速电场当中，减速电场的场强大小相对加速电场来说是不可以忽略的。其次，研究了基区不同的掺杂曲线对τ_b、f_T、f_(max)的影响，并得出，非均匀掺杂对InP／In_(0.53)Ga_(0.47)As HBT的性能参数f_T的改善不是特别大。最后研究了由于掺杂工艺误差对τ_b、f_T、f_(max)的影响，并得出在V_(BE)=0.64V、α=2.78、λ=0.38时，5％的掺杂工艺偏差给f_T带来的波动仅为1％左右；
(4)参与了InP基HBT、PIN—PD、光接收机前端单片OEIC三种器件的制备。经过测试得出：对于2μm尺寸型号的InP基HBT器件，其电流增益截止频率f_T为28GHz；对于入光面为22×22μm~2尺寸型号的PIN—PD器件，其高频响应带宽为16GHz；对于由以上两者组成的光接收机前端单片OEIC器件，其高频响应带宽为3GHz。
The research works described in this paper were supported by the grants from many research projects, including Doctoral Subjects Research Grants of Ministry of Education, PRC, "Monolithic OEIC photoreceiver modules based on RCE photodetectors and HBT" (20020013010) and National Basic Research Program of China, "Basic Research on Integrated Optoelectronic Devices and Microstructure Optical Fibers with Structure and Technology Innovations for Future Advanced Optical Communications" (2003CB314900).
InP-based HBT have many attractions in the field of Fiber-Optic communication, and they can integrate with photodetectors with shared epitaxial layers on a single substrate, which have the advantages of one-step epitaxy, simplicity of fabrication, and possibly higher reliability. As one kind of promising devices for high-speed application, the research on InP-based HBT has bright future and so attracts much attention in the world.
This paper studied the theory and experimental fabrication of InP-based HBT, and its monolithic integration with PIN-photodetector. In this paper, the author has obtained the results as the following:
(1) Systematically studied and summarized the physical parameters usually used in the theoretical model of HBT. Obtained the formulas of mobilities of InP and In_(0.53)Ga_(0.47)As semiconduct materials based on the released references, which takes an important role in the theoretical simulations of InP-based HBT;
(2) Studied the influences of InP-based HBT's direct-current and high-frequency characteristics after Kirk Effect emerges under large current density, and obtained the result that the characteristics of both InP-based HBT's Direct Current and High Frequency will deteriorate after Kirk Effect happened. At the same time, this paper also studied the influences ofτ_b, f_(?) and f_(max) with X_s which is the distance of zero-electric field in the depletion layer of base-collector junction, and obtained the conclusion that the distance of X_s is unignorable compared with X_B especially in the case of Base thickness is very thin and Collector is very thick;
(3) Studied the influences of InP-based HBT's characteristic parameters with the case that the Base is ununiformly doped. At first, the author studied the mechanism and composition of inner build-in electric field in the Base, and got the conclusion that the decelerating electric field of p-Ino.53Gao.47As semiconduct material resulted in Band Gap Narrowing Effect which led by graded base doping is unignorable compared with the accelerating electric field. Secondly, studied the influences ofτ_b, f_(?) and f_(max) with different doping curves of the Base, and got the conclusion that it has not very distinct improvement to the parameter of f_(?) of InP/In_(0.53)Ga_(0.47)As HBT. Thirdly, studied the influences ofτ_b, f_(?) and f_(max) with doping deviation to the assumed doping curve, and obtained the result that the influence of doping deviation to the deviation of f_(?) is very small. For instance, under the conditions of V_(BE)=0.64,α=2.78 andλ=0.38, 5% of doping deviation leads only 1 % of deviation to f_(?);
(4) The author participated in the fabrications of InP-based HBT, PIN-PD and the monolithic OEIC photoreceiver. The testing results of these devices described as the following: as to the 2μm size style of InP-based HBT, the parameter of f_(?) was 28GHz; as to the PIN-PD of 22×22μm~2 incidence area, the responding band of high frequency was 16GHz; as to the monolithic OEIC photoreceiver based on the above styles of PIN-PD and InP-based HBT, the responding band of high frequency was 3 GHz.
InP基异质结双极晶体管(HBT)在光纤通信等领域具有极其广阔的应用前景，并且可以与光电探测器等光器件单片集成，因而深入系统地研究InP基HBT器件具有极其重要的意义。
本论文的工作主要是围绕着InP基HBT器件的理论研究、实验制备及其与PIN光电探测器的单片集成而展开的。现将本论文所包含的研究成果总结如下：
(1)系统地研究并总结了HBT理论模型中常见物理量的计算，并结合已有文献资料总结出了InP与In_(0.53)Ga(0.47)As材料的迁移率公式，这对InP基HBT的各种理论仿真计算有着重要的作用；
(2)研究了在大电流密度下发生Kirk效应时对InP基HBT直流特性和高频特性的影响，得出Kirk效应的发生会导致InP基HBT的直流增益和高频特性均变差。与此同时，研究了在发生Kirk效应后，在BC结B区侧产生的零电场区域厚度X_S对τ_b、f_T与f_(max)的影响，并得出X_S相对于X_B来说是不可忽略的，这对于基区厚度很薄而C区又很厚的情况时，在τ_b的计算中，X_S所占的权重将会变得更加重要；
(3)研究了InP基HBT的基区在非均匀掺杂情况下对其各性能参数的影响。首先研究了非均匀掺杂时在基区的内建场分布情况，并得出，在对基区进行非均匀掺杂时所产生的加速电场与减速电场当中，减速电场的场强大小相对加速电场来说是不可以忽略的。其次，研究了基区不同的掺杂曲线对τ_b、f_T、f_(max)的影响，并得出，非均匀掺杂对InP／In_(0.53)Ga_(0.47)As HBT的性能参数f_T的改善不是特别大。最后研究了由于掺杂工艺误差对τ_b、f_T、f_(max)的影响，并得出在V_(BE)=0.64V、α=2.78、λ=0.38时，5％的掺杂工艺偏差给f_T带来的波动仅为1％左右；
(4)参与了InP基HBT、PIN—PD、光接收机前端单片OEIC三种器件的制备。经过测试得出：对于2μm尺寸型号的InP基HBT器件，其电流增益截止频率f_T为28GHz；对于入光面为22×22μm~2尺寸型号的PIN—PD器件，其高频响应带宽为16GHz；对于由以上两者组成的光接收机前端单片OEIC器件，其高频响应带宽为3GHz。
The research works described in this paper were supported by the grants from many research projects, including Doctoral Subjects Research Grants of Ministry of Education, PRC, "Monolithic OEIC photoreceiver modules based on RCE photodetectors and HBT" (20020013010) and National Basic Research Program of China, "Basic Research on Integrated Optoelectronic Devices and Microstructure Optical Fibers with Structure and Technology Innovations for Future Advanced Optical Communications" (2003CB314900).
InP-based HBT have many attractions in the field of Fiber-Optic communication, and they can integrate with photodetectors with shared epitaxial layers on a single substrate, which have the advantages of one-step epitaxy, simplicity of fabrication, and possibly higher reliability. As one kind of promising devices for high-speed application, the research on InP-based HBT has bright future and so attracts much attention in the world.
This paper studied the theory and experimental fabrication of InP-based HBT, and its monolithic integration with PIN-photodetector. In this paper, the author has obtained the results as the following:
(1) Systematically studied and summarized the physical parameters usually used in the theoretical model of HBT. Obtained the formulas of mobilities of InP and In_(0.53)Ga_(0.47)As semiconduct materials based on the released references, which takes an important role in the theoretical simulations of InP-based HBT;
(2) Studied the influences of InP-based HBT's direct-current and high-frequency characteristics after Kirk Effect emerges under large current density, and obtained the result that the characteristics of both InP-based HBT's Direct Current and High Frequency will deteriorate after Kirk Effect happened. At the same time, this paper also studied the influences ofτ_b, f_(?) and f_(max) with X_s which is the distance of zero-electric field in the depletion layer of base-collector junction, and obtained the conclusion that the distance of X_s is unignorable compared with X_B especially in the case of Base thickness is very thin and Collector is very thick;
(3) Studied the influences of InP-based HBT's characteristic parameters with the case that the Base is ununiformly doped. At first, the author studied the mechanism and composition of inner build-in electric field in the Base, and got the conclusion that the decelerating electric field of p-Ino.53Gao.47As semiconduct material resulted in Band Gap Narrowing Effect which led by graded base doping is unignorable compared with the accelerating electric field. Secondly, studied the influences ofτ_b, f_(?) and f_(max) with different doping curves of the Base, and got the conclusion that it has not very distinct improvement to the parameter of f_(?) of InP/In_(0.53)Ga_(0.47)As HBT. Thirdly, studied the influences ofτ_b, f_(?) and f_(max) with doping deviation to the assumed doping curve, and obtained the result that the influence of doping deviation to the deviation of f_(?) is very small. For instance, under the conditions of V_(BE)=0.64,α=2.78 andλ=0.38, 5% of doping deviation leads only 1 % of deviation to f_(?);
(4) The author participated in the fabrications of InP-based HBT, PIN-PD and the monolithic OEIC photoreceiver. The testing results of these devices described as the following: as to the 2μm size style of InP-based HBT, the parameter of f_(?) was 28GHz; as to the PIN-PD of 22×22μm~2 incidence area, the responding band of high frequency was 16GHz; as to the monolithic OEIC photoreceiver based on the above styles of PIN-PD and InP-based HBT, the responding band of high frequency was 3 GHz.
引文
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[2] H Kroemer, "Theory of a wide-gap emitter for transistors", Proceedings of the IRE, Vol. 45, 1957, pp. 1535-1537.
[3] The Royal Academy of Sciences Press Release on the Nobel Prize in Physics 2000, October 10, 2000.
[4] W P Dumke, J M Woodull and V L Rideoout, Solid State Electronics, Vol 15, 1972, pp. 1339-1343.
[5] 崇英哲，“单片集成及新型光接收器件的研究”，[博士论文]，北京邮电大学，2004．
[6] Kazuhiro Mochizuki, Kiyoshi Ouchi, et al., "Heavily Carbon-Doped InGaP/GaAs HBT's with Buried Polycrystalline GaAs Under the Base Electrode", IEEE Tran. Electron devices, Vol. 45, No. 11, 1998, pp. 2268-2274.
[7] M. W. Dvorak, et al., "300 GHz InP/GaAsSb/InP Double HBTs with High Current Capability and BV_(CEO)≥6V", IEEE Electron Device Lett., Vol. 22, No. 8, 2001, pp. 361-363.
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