SOI制备中氧离子注入缺陷的控制与研究
摘要
绝缘材料上的硅(SOI:Silicon On Insulator)同体硅相比,具有降低功耗、提高集成密度、减少工艺步骤、可实现1V以下驱动和提高运行速度等优点。由于绝缘材料优异的隔离性能,速度可提高20-35%；拓宽了器件工作温度范围；有优异的抗辐照性能；还降低了电路的造价。SOI技术实现了“摩尔”图上的跳跃,突破了体硅及其集成电路的物理限制,将逐步取代体硅成为CMOS等的主流技术。
作为SOI圆片的最成熟的制作方法---注氧隔离法(SIMOX),已经在生产中广泛的应用,其中最为关键的设备是大能量大剂量大束流氧离子注入机。SIMOX技术运用该种离子注入机进行注入工艺使的注入后的晶格缺陷增加,成为SOI圆片的最大的良率损失因素。
本文着重研究了氧离子注入机在SIMOX技术中产生的缺陷,及其表征手段；通过工艺实验,控制注入的能量,剂量,束流和注入温度减少缺陷数量。并得出低剂量会导致明显的针孔缺陷、高能量也会导致针孔数量增多和低温注入缺陷多的实验结果,进而提出针对注入机的改进措施。
通过论文工作对注入温度,能量,剂量,束流的合理设置,已经应用于MOS功率器件的制造工艺,并被运用在公司的规模化生产中,取得良好的芯片良率和经济效益。
Compared to bulk silicon, SOI(Silicon On Insulator) technology supplies better performance by increasing processing speed, reducing the amount of power, improving reliability and permitting smaller packaging size. The inherent operating advantages of SOI based IC s apply to a wide range of products across a broad base of industries such as a full range of competers, servers and workstations, networks, portable battery powered products, harsh environment systems and other applications where o-equipment must perform reliably.SOI achieves a two-year performance gain over conventional bulk silicon technology, causes a jump in the performance roadmap and compensates for some of the expected loss of bulk technology performance improvement on the chart of Moore's Law. It is becoming as a mainstream chip-making technique and the new silicon-based integrated circuits technology in 21century.
As the best method of manufacturing SOI wafer---SIMOX technology have been applied widely at present, and the rule key tool is oxygen implanter which have the ability about high energy, high dose, big beam current.
The crystal defect after implantation become the maximal yield loss when SIMOX technology adopt with oxygen implantation. So the article give emphasis to study the production theory of implanted crystal defect, and how to control the defects with the different condition with energy, dose, beam current and temperature. And found the result that more pinhole defect at lower dose (within critical dose), a little more pinhole defect at higher energy and more pinhole at lower temperature of wafer when implanting, provide some improvement action of implanter setting and process control according split experiment.
The reasonable implantation condition have been applied to the big scale production, and get a bigger improvement than before at yield.
作为SOI圆片的最成熟的制作方法---注氧隔离法(SIMOX),已经在生产中广泛的应用,其中最为关键的设备是大能量大剂量大束流氧离子注入机。SIMOX技术运用该种离子注入机进行注入工艺使的注入后的晶格缺陷增加,成为SOI圆片的最大的良率损失因素。
本文着重研究了氧离子注入机在SIMOX技术中产生的缺陷,及其表征手段；通过工艺实验,控制注入的能量,剂量,束流和注入温度减少缺陷数量。并得出低剂量会导致明显的针孔缺陷、高能量也会导致针孔数量增多和低温注入缺陷多的实验结果,进而提出针对注入机的改进措施。
通过论文工作对注入温度,能量,剂量,束流的合理设置,已经应用于MOS功率器件的制造工艺,并被运用在公司的规模化生产中,取得良好的芯片良率和经济效益。
Compared to bulk silicon, SOI(Silicon On Insulator) technology supplies better performance by increasing processing speed, reducing the amount of power, improving reliability and permitting smaller packaging size. The inherent operating advantages of SOI based IC s apply to a wide range of products across a broad base of industries such as a full range of competers, servers and workstations, networks, portable battery powered products, harsh environment systems and other applications where o-equipment must perform reliably.SOI achieves a two-year performance gain over conventional bulk silicon technology, causes a jump in the performance roadmap and compensates for some of the expected loss of bulk technology performance improvement on the chart of Moore's Law. It is becoming as a mainstream chip-making technique and the new silicon-based integrated circuits technology in 21century.
As the best method of manufacturing SOI wafer---SIMOX technology have been applied widely at present, and the rule key tool is oxygen implanter which have the ability about high energy, high dose, big beam current.
The crystal defect after implantation become the maximal yield loss when SIMOX technology adopt with oxygen implantation. So the article give emphasis to study the production theory of implanted crystal defect, and how to control the defects with the different condition with energy, dose, beam current and temperature. And found the result that more pinhole defect at lower dose (within critical dose), a little more pinhole defect at higher energy and more pinhole at lower temperature of wafer when implanting, provide some improvement action of implanter setting and process control according split experiment.
The reasonable implantation condition have been applied to the big scale production, and get a bigger improvement than before at yield.
引文
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4. Harold J Hovel. Silicon-on-insulator substrate:status and prognosis. Proceedings 1996 IEEE International SOI Conference,1996.1
5. CHEN Meng, CHEN Jing, Lin Zi-xin etal., Th e Fou rth National S ymposium on SOI Techn ology, Beijing,2000,102.
6. CHEN Meng, WANG Xiang, CHEN Jing, LIU Xianghua, DONG Yeming, YU Yuehui, WANG Xi, Dose-energy match for formation of high-integrity buried oxide layer in low-dose separation-by-implantation-of-oxygen materials, Applied Physics Letter,80,880(2002)
7. S Nakaharai, T Tezuka, N Hirashita, E Toyoda, Y Moriyama, N Sugiyama and S Takagi, The generation of crystal defects in Ge-on-insulator (GOI) layers in the Ge-condensation process, Semicond. Sci. Technol.22, S103(2007)
8. www. IBIS, com & www. simgui. com. cn
9. Hamachi I, Fujita T, Yano T, Kajiyama K. SOI Conf Proc [C]. IEEE 1992 Int,1992,12.
10.林成鲁、刘卫丽《纳米技术时代的高端硅基材料-SOI, sSOI和GOI》,,2007年5月第七届全国SOI技术研讨会会议论文集
11.林成鲁.SOI技术的新进展[J].功能材料与器件学报.20017(1)
12.1. K. Gurcan, A. Bertuch and K. Steeples, "Real-Time High Resolution Wafer Mapping for Advanced Ion Implant Process Control," Frontiers of Characterization and Metrology for Nanoelectronics Intl. Conf.,2007
13.王贻华,胡正琼.离子注入与分析基础[M].北京：航空工业出版社,1992：7-16
14. Zhang Peng peng, Tevaarwer k Emma, Par k Byo ung nam, etal. Nature, 2006,439 (9)
15. Seghir K, Cristo lo veanuS, Jer isian R, et al. IEEE T rans Electro n Dev ice,1993,40 (6)
16.Ikeda H, Ishikawa Y, Homma Y, Tabe M. Microprocesses and Nanotechnology International Conference [C]. Tokyo,2003.18.
17. Afanas. e V, Ericsso n P, Bengtsson S, etal. Appl Phys Lett,1995,66 (13)
2.黄如,张国艳.SOI CMOS技术及其应用.北京：科学技术出版社,2005.18
3. 阙端麟,陈修治.硅材料科学与技术.杭州：浙江大学出版社,2000.322
4. Harold J Hovel. Silicon-on-insulator substrate:status and prognosis. Proceedings 1996 IEEE International SOI Conference,1996.1
5. CHEN Meng, CHEN Jing, Lin Zi-xin etal., Th e Fou rth National S ymposium on SOI Techn ology, Beijing,2000,102.
6. CHEN Meng, WANG Xiang, CHEN Jing, LIU Xianghua, DONG Yeming, YU Yuehui, WANG Xi, Dose-energy match for formation of high-integrity buried oxide layer in low-dose separation-by-implantation-of-oxygen materials, Applied Physics Letter,80,880(2002)
7. S Nakaharai, T Tezuka, N Hirashita, E Toyoda, Y Moriyama, N Sugiyama and S Takagi, The generation of crystal defects in Ge-on-insulator (GOI) layers in the Ge-condensation process, Semicond. Sci. Technol.22, S103(2007)
8. www. IBIS, com & www. simgui. com. cn
9. Hamachi I, Fujita T, Yano T, Kajiyama K. SOI Conf Proc [C]. IEEE 1992 Int,1992,12.
10.林成鲁、刘卫丽《纳米技术时代的高端硅基材料-SOI, sSOI和GOI》,,2007年5月第七届全国SOI技术研讨会会议论文集
11.林成鲁.SOI技术的新进展[J].功能材料与器件学报.20017(1)
12.1. K. Gurcan, A. Bertuch and K. Steeples, "Real-Time High Resolution Wafer Mapping for Advanced Ion Implant Process Control," Frontiers of Characterization and Metrology for Nanoelectronics Intl. Conf.,2007
13.王贻华,胡正琼.离子注入与分析基础[M].北京：航空工业出版社,1992：7-16
14. Zhang Peng peng, Tevaarwer k Emma, Par k Byo ung nam, etal. Nature, 2006,439 (9)
15. Seghir K, Cristo lo veanuS, Jer isian R, et al. IEEE T rans Electro n Dev ice,1993,40 (6)
16.Ikeda H, Ishikawa Y, Homma Y, Tabe M. Microprocesses and Nanotechnology International Conference [C]. Tokyo,2003.18.
17. Afanas. e V, Ericsso n P, Bengtsson S, etal. Appl Phys Lett,1995,66 (13)
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