摘要
SiC是一种宽带隙半导体材料、第三代半导体材料的代表，是制造高温、高频、大功率、抗辐照等半导体器件的优选材料，又被称为极端电子学材料，在微电子学领域具有广阔的应用前景。本论文提出了在蓝宝石上引入一层缓冲层材料形成复合衬底，采用常压化学气相淀积(APCVD)方法在其上异质外延生长SiC薄膜的技术，分析了CVD法生长SiC的物理化学过程，通过实验提出SiC薄膜生长的工艺条件，并通过X射线衍射(XRD)、X射线光电子能谱(XPS)、光致发光谱(PL谱)和扫描电镜(SEM)对外延薄膜的结构性质进行分析。结果表明，在蓝宝石复合衬底上可以生长出均匀连续的SiC单晶薄膜。
As a wide bandgap semiconductor material, silicon carbide is an exellent material with superior thermal, electrical, mechanical and chemical properties for the fabrication of high temperature, high power, high frequency and radiation hardening electronic devices. In this paper, the growth technology is presented for epitaxial silicon carbide films on sapphire with a buffer layer by atmospheric-pressure chemical vapor deposition (APCVD) process. The effect of temperature and precursors flow rates on the growth of silicon carbide films by chemical vapor deposition is analyzed. The structural properties of the films grown on sapphire compound substrate are studied by X-ray diffraction (XRD),X-ray photospectroscopy (XPS) and photoluminescence spectroscopy. The surface morphology is studied by scanning electron microscopy (SEM). The results reveal that the single-crystal silicon carbide films with smooth and continuous apperance are obtained under the reported experimental conditions.
引文
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