Patterned Growth of P-Type MoS₂ Atomic Layers Using Sol-Gel as Precursor

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• 作者：Wei Zheng ; Junhao Lin ; Wei Feng ; Kai Xiao ; Yunfeng Qiu ; XiaoShuang Chen ; Guangbo Liu ; Wenwu Cao ; Sokrates T. Pantelides ; Wu Zhou and PingAn Hu
• 刊名：Advanced Functional Materials
• 出版年：2016
• 出版时间：September 20, 2016
• 年：2016
• 卷：26
• 期：35
• 页码：6371-6379
• 全文大小：8072K
• ISSN：1616-3028

文摘

2D layered MoS₂ has drawn intense attention for its applications in flexible electronic, optoelectronic, and spintronic devices. Most of the MoS₂ atomic layers grown by conventional chemical vapor deposition techniques are n-type due to the abundant sulfur vacancies. Facile production of MoS₂ atomic layers with p-type behavior, however, remains challenging. Here, a novel one-step growth has been developed to attain p-type MoS₂ layers in large scale by using Mo-containing sol–gel, including 1% tungsten (W). Atomic-resolution electron microscopy characterization reveals that small tungsten oxide clusters are commonly present on the as-grown MoS₂ film due to the incomplete reduction of W precursor at the reaction temperature. These omnipresent small tungsten oxide clusters contribute to the p-type behavior, as verified by density functional theory calculations, while preserving the crystallinity of the MoS₂ atomic layers. The Mo containing sol–gel precursor is compatible with the soft-lithography techniques, which enables patterned growth of p-type MoS₂ atomic layers into regular arrays with different shapes, holding great promise for highly integrated device applications. Furthermore, an atomically thin p–n junction is fabricated by the as-prepared MoS₂, which shows strong rectifying behavior.